Optoelectronic chromatic dispersion and wavelength monitoring in a photodiode

ZIV GLASSER, PAWAN KUMAR DUBEY, AYUUSHI DUTTA, EGOR LIOKUMOVITCH, RITA ABRAMOV, SHMUEL STERNKLAR

פרסום מחקרי: פרסום בכתב עתמאמרביקורת עמיתים

תקציר

The optoelectronic process of light absorption and current formation in photodiodes is shown to be a significant source of optoelectronic chromatic dispersion (OED). Simple design rules are developed for fabricating a photodiode-based dispersion device that possesses large, small, zero, and either positive or negative OED. The OED parameter is proportional to a spectrally-dependent absorption term α-1dα/dλ . Silicon-based devices are predicted to display significant OED throughout the near IR, while Ge and InGaAs have high OED in the C- and L-bands and 1650 nm region, respectively. The OED of a commercial Ge PN photodiode is measured to be 3460 ps/nm at 1560 nm wavelength with 500 kHz modulation, demonstrating 8 pm spectral resolution with the phase-shift technique. Temperature-tuning of the OED in the Ge photodiode is also demonstrated. The ubiquitous photodiode is a tunable OED device, with applications in high-resolution optical spectroscopy and optical sensing.

שפה מקוריתאנגלית
עמודים (מ-עד)19839-19852
מספר עמודים14
כתב עתOptics Express
כרך29
מספר גיליון13
מזהי עצם דיגיטלי (DOIs)
סטטוס פרסוםפורסם - 21 יוני 2021

ASJC Scopus subject areas

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