Nanotube based transistor structure, method of fabrication and uses thereof

Shahal Ilani (ממציא), Sharon Pecker (ממציא), Avishai Benyamini (ממציא), Jonah Waissman (ממציא), Maayan Honig (ממציא), Joseph Sulpizio (ממציא), Lior Ella (ממציא), Assaf Hamo (ממציא)

פרסום מחקרי: פטנט

תקציר

A method for use in construction of an electronic device and a transistor structure are presented. The method comprising: providing one or more nanotubes grown on a surface of a first substrate; providing a desired electrode arrangement fabricated on a surface of a second substrate. The electrode arrangement comprises at least two elevated source and drain electrodes and one or more gate electrodes located in between said elevated source and drain electrodes. The method also comprises bringing the electrode arrangement on the second substrate to close proximity with the first substrate such that surfaces of the first and second substrates face each other; scanning said first substrate with said electrode arrangement and determining contact of electrodes of the electrode arrangement with a nanotube located on the first substrate; and detaching said nanotube from the first substrate to provide a transistor structure comprising an isolated nanotube between the source and drain electrodes. The invention further provides systems comprising electronic devices and transistor structures of the invention. The invention further provides methods of use, the methods utilize electronic devices and transistor structures of the invention.
שפה מקוריתאנגלית
מספר פטנטUS20190018041A1
סטטוס פרסוםפורסם - 1 ינו׳ 2019

טביעת אצבע

להלן מוצגים תחומי המחקר של הפרסום 'Nanotube based transistor structure, method of fabrication and uses thereof'. יחד הם יוצרים טביעת אצבע ייחודית.

פורמט ציטוט ביבליוגרפי