Integrated circuit reliability prediction based on physics-of-failure models in conjunction with field study

Avshalom Hava, Jin Qin, Joseph B. Bernstein, Yizhak Bot

פרסום מחקרי: פרק בספר / בדוח / בכנספרסום בספר כנסביקורת עמיתים

תקציר

Microelectronics device reliability has been improving with every generation of technology whereas the density of the circuits continues to double approximately every 18 months. We studied field data gathered from a large fleet of mobile communications products that were deployed over a period of 8 years in order to examine the reliability trend in the field. We extrapolated the expected failure rate for a series of microprocessors and found a significant trend whereby the circuit failure rate increases approximately half the rate of the technology, going up by approximately √2 in that same 18 month period.

שפה מקוריתאנגלית
כותר פרסום המארח59th Annual Reliability and Maintainability Symposium, RAMS 2013 - Proceedings and Tutorials
מזהי עצם דיגיטלי (DOIs)
סטטוס פרסוםפורסם - 2013
אירוע59th Annual Reliability and Maintainability Symposium, RAMS 2013 - Orlando, FL, ארצות הברית
משך הזמן: 28 ינו׳ 201331 ינו׳ 2013

סדרות פרסומים

שםProceedings - Annual Reliability and Maintainability Symposium

כנס

כנס59th Annual Reliability and Maintainability Symposium, RAMS 2013
מדינה/אזורארצות הברית
עירOrlando, FL
תקופה28/01/1331/01/13

ASJC Scopus subject areas

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