Colloidal Atomic Layer Deposition with Stationary Reactant Phases Enables Precise Synthesis of "digital" II-VI Nano-heterostructures with Exquisite Control of Confinement and Strain

Abhijit Hazarika, Igor Fedin, Liang Hong, Jinglong Guo, Vishwas Srivastava, Wooje Cho, Igor Coropceanu, Joshua Portner, Benjamin T. Diroll, John P. Philbin, Eran Rabani, Robert Klie, Dmitri V. Talapin

פרסום מחקרי: פרסום בכתב עתמאמרביקורת עמיתים

תקציר

In contrast to molecular systems, which are defined with atomic precision, nanomaterials generally show some heterogeneity in size, shape, and composition. The sample inhomogeneity translates into a distribution of energy levels, band gaps, work functions, and other characteristics, which detrimentally affect practically every property of functional nanomaterials. We discuss a novel synthetic strategy, colloidal atomic layer deposition (c-ALD) with stationary reactant phases, which largely circumvents the limitations of traditional colloidal syntheses of nano-heterostructures with atomic precision. This approach allows for significant reduction of inhomogeneity in nanomaterials in complex nanostructures without compromising their structural perfection and enables the synthesis of epitaxial nano-heterostructures of unprecedented complexity. The improved synthetic control ultimately enables bandgap and strain engineering in colloidal nanomaterials with close to atomic accuracy. To demonstrate the power of the new c-ALD method, we synthesize a library of complex II-VI semiconductor nanoplatelet heterostructures. By combining spectroscopic and computational studies, we elucidate the subtle interplay between quantum confinement and strain effects on the optical properties of semiconductor nanostructures.

שפה מקוריתאנגלית
עמודים (מ-עד)13487-13496
מספר עמודים10
כתב עתJournal of the American Chemical Society
כרך141
מספר גיליון34
מזהי עצם דיגיטלי (DOIs)
סטטוס פרסוםפורסם - 28 אוג׳ 2019

ASJC Scopus subject areas

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