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Write-Amplification Reduction Through Multi-Write Codes in Flash Storage

Saher Odeh, Yuval Cassuto

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this work we investigate how to cleverly employ multi-write codes within the flash translation layer (FTL). The two proposed architectures combine bewteen standard access and re-write access and exploit the workload locality to reduce the write-amplification significantly. These architectures show clear advantage over no re-write and known re-write schemes for both synthetic workloads and industry-accepted benchmark traces.
Original languageAmerican English
Title of host publication5th Annual Non-Volatile Memories Workshop 2014
Subtitle of host publicationNVMW 2014.
StatePublished - 2014

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