WOM codes reduce write amplification in NAND flash memory

Xiang Luojie; Brian M. Kurkoski; Eitan Yaakobi

doi:10.1109/GLOCOM.2012.6503611

WOM codes reduce write amplification in NAND flash memory

Xiang Luojie, Brian M. Kurkoski, Eitan Yaakobi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

This paper proposes a NAND flash system that uses Write-Once Memory (WOM) codes to encode the data stored. It is shown through both analysis and simulation that, with proper parameters, flash memories which use WOM codes to encode data can achieve a lower write amplification than in a non-WOM-coded system. For example, in a 16-level per cell flash memory, when a two-write MLC WOM code is used with a total overprovisioning of 0.8, the write amplification is 15% lower than a non-WOM-coded system. A closed-form expression for the write amplification in a WOM-coded system is given for a system with a greedy garbage collection policy and a uniform random workload. The proposed expression is a function of the total overprovisioning factor, number of WOM code writes, and number of values per cell. The expression is applicable for both SLC and MLC flash.

Original language	English
Title of host publication	2012 IEEE Global Communications Conference, GLOBECOM 2012
Pages	3225-3230
Number of pages	6
DOIs	https://doi.org/10.1109/GLOCOM.2012.6503611
State	Published - 2012
Externally published	Yes
Event	2012 IEEE Global Communications Conference, GLOBECOM 2012 - Anaheim, CA, United States Duration: 3 Dec 2012 → 7 Dec 2012

Publication series

Name	GLOBECOM - IEEE Global Telecommunications Conference

Conference

Conference	2012 IEEE Global Communications Conference, GLOBECOM 2012
Country/Territory	United States
City	Anaheim, CA
Period	3/12/12 → 7/12/12

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/GLOCOM.2012.6503611

Cite this

@inproceedings{4523eef5255e4817a9137d40bd7d8a69,

title = "WOM codes reduce write amplification in NAND flash memory",

abstract = "This paper proposes a NAND flash system that uses Write-Once Memory (WOM) codes to encode the data stored. It is shown through both analysis and simulation that, with proper parameters, flash memories which use WOM codes to encode data can achieve a lower write amplification than in a non-WOM-coded system. For example, in a 16-level per cell flash memory, when a two-write MLC WOM code is used with a total overprovisioning of 0.8, the write amplification is 15\% lower than a non-WOM-coded system. A closed-form expression for the write amplification in a WOM-coded system is given for a system with a greedy garbage collection policy and a uniform random workload. The proposed expression is a function of the total overprovisioning factor, number of WOM code writes, and number of values per cell. The expression is applicable for both SLC and MLC flash.",

author = "Xiang Luojie and Kurkoski, \{Brian M.\} and Eitan Yaakobi",

year = "2012",

doi = "10.1109/GLOCOM.2012.6503611",

language = "الإنجليزيّة",

isbn = "9781467309219",

series = "GLOBECOM - IEEE Global Telecommunications Conference",

pages = "3225--3230",

booktitle = "2012 IEEE Global Communications Conference, GLOBECOM 2012",

note = "2012 IEEE Global Communications Conference, GLOBECOM 2012 ; Conference date: 03-12-2012 Through 07-12-2012",

}

Luojie, X, Kurkoski, BM & Yaakobi, E 2012, WOM codes reduce write amplification in NAND flash memory. in 2012 IEEE Global Communications Conference, GLOBECOM 2012., 6503611, GLOBECOM - IEEE Global Telecommunications Conference, pp. 3225-3230, 2012 IEEE Global Communications Conference, GLOBECOM 2012, Anaheim, CA, United States, 3/12/12. https://doi.org/10.1109/GLOCOM.2012.6503611

TY - GEN

T1 - WOM codes reduce write amplification in NAND flash memory

AU - Luojie, Xiang

AU - Kurkoski, Brian M.

AU - Yaakobi, Eitan

PY - 2012

Y1 - 2012

N2 - This paper proposes a NAND flash system that uses Write-Once Memory (WOM) codes to encode the data stored. It is shown through both analysis and simulation that, with proper parameters, flash memories which use WOM codes to encode data can achieve a lower write amplification than in a non-WOM-coded system. For example, in a 16-level per cell flash memory, when a two-write MLC WOM code is used with a total overprovisioning of 0.8, the write amplification is 15% lower than a non-WOM-coded system. A closed-form expression for the write amplification in a WOM-coded system is given for a system with a greedy garbage collection policy and a uniform random workload. The proposed expression is a function of the total overprovisioning factor, number of WOM code writes, and number of values per cell. The expression is applicable for both SLC and MLC flash.

AB - This paper proposes a NAND flash system that uses Write-Once Memory (WOM) codes to encode the data stored. It is shown through both analysis and simulation that, with proper parameters, flash memories which use WOM codes to encode data can achieve a lower write amplification than in a non-WOM-coded system. For example, in a 16-level per cell flash memory, when a two-write MLC WOM code is used with a total overprovisioning of 0.8, the write amplification is 15% lower than a non-WOM-coded system. A closed-form expression for the write amplification in a WOM-coded system is given for a system with a greedy garbage collection policy and a uniform random workload. The proposed expression is a function of the total overprovisioning factor, number of WOM code writes, and number of values per cell. The expression is applicable for both SLC and MLC flash.

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U2 - 10.1109/GLOCOM.2012.6503611

DO - 10.1109/GLOCOM.2012.6503611

M3 - منشور من مؤتمر

SN - 9781467309219

T3 - GLOBECOM - IEEE Global Telecommunications Conference

SP - 3225

EP - 3230

BT - 2012 IEEE Global Communications Conference, GLOBECOM 2012

T2 - 2012 IEEE Global Communications Conference, GLOBECOM 2012

Y2 - 3 December 2012 through 7 December 2012

ER -

WOM codes reduce write amplification in NAND flash memory

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All Science Journal Classification (ASJC) codes

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