Vertically Illuminated, Resonant Cavity Enhanced, Graphene-Silicon Schottky Photodetectors

Maurizio Casalino; Ugo Sassi; Ilya Goykhman; Anna Eiden; Elefterios Lidorikis; Silvia Milana; Domenico De Fazio; Flavia Tomarchio; Mario Iodice; Giuseppe Coppola; Andrea C. Ferrari

doi:https://doi.org/10.1021/acsnano.7b04792

Vertically Illuminated, Resonant Cavity Enhanced, Graphene-Silicon Schottky Photodetectors

Maurizio Casalino, Ugo Sassi, Ilya Goykhman, Anna Eiden, Elefterios Lidorikis, Silvia Milana, Domenico De Fazio, Flavia Tomarchio, Mario Iodice, Giuseppe Coppola, Andrea C. Ferrari

Research output: Contribution to journal › Article › peer-review

Abstract

We report vertically illuminated, resonant cavity enhanced, graphene-Si Schottky photodetectors (PDs) operating at 1550 nm. These exploit internal photoemission at the graphene-Si interface. To obtain spectral selectivity and enhance responsivity, the PDs are integrated with an optical cavity, resulting in multiple reflections at resonance, and enhanced absorption in graphene. We get a wavelength-dependent photoresponse with external (internal) responsivity ∼20 mA/W (0.25A/W). The spectral selectivity may be further tuned by varying the cavity resonant wavelength. Our devices pave the way for developing high responsivity hybrid graphene-Si free-space illuminated PDs for optical communications, coherence optical tomography, and light-radars.

Original language	English
Pages (from-to)	10955-10963
Number of pages	9
Journal	ACS Nano
Volume	11
Issue number	11
DOIs	https://doi.org/10.1021/acsnano.7b04792
State	Published - 28 Nov 2017
Externally published	Yes

Keywords

graphene
internal photoemission
photodetectors
resonant cavity

All Science Journal Classification (ASJC) codes

General Materials Science
General Engineering
General Physics and Astronomy

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https://doi.org/10.1021/acsnano.7b04792

Cite this

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title = "Vertically Illuminated, Resonant Cavity Enhanced, Graphene-Silicon Schottky Photodetectors",

abstract = "We report vertically illuminated, resonant cavity enhanced, graphene-Si Schottky photodetectors (PDs) operating at 1550 nm. These exploit internal photoemission at the graphene-Si interface. To obtain spectral selectivity and enhance responsivity, the PDs are integrated with an optical cavity, resulting in multiple reflections at resonance, and enhanced absorption in graphene. We get a wavelength-dependent photoresponse with external (internal) responsivity ∼20 mA/W (0.25A/W). The spectral selectivity may be further tuned by varying the cavity resonant wavelength. Our devices pave the way for developing high responsivity hybrid graphene-Si free-space illuminated PDs for optical communications, coherence optical tomography, and light-radars.",

keywords = "graphene, internal photoemission, photodetectors, resonant cavity",

author = "Maurizio Casalino and Ugo Sassi and Ilya Goykhman and Anna Eiden and Elefterios Lidorikis and Silvia Milana and {De Fazio}, Domenico and Flavia Tomarchio and Mario Iodice and Giuseppe Coppola and Ferrari, {Andrea C.}",

note = "Publisher Copyright: {\textcopyright} 2017 American Chemical Society.",

year = "2017",

month = nov,

day = "28",

doi = "https://doi.org/10.1021/acsnano.7b04792",

language = "الإنجليزيّة",

volume = "11",

pages = "10955--10963",

journal = "ACS Nano",

issn = "1936-0851",

publisher = "American Chemical Society",

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TY - JOUR

T1 - Vertically Illuminated, Resonant Cavity Enhanced, Graphene-Silicon Schottky Photodetectors

AU - Casalino, Maurizio

AU - Sassi, Ugo

AU - Goykhman, Ilya

AU - Eiden, Anna

AU - Lidorikis, Elefterios

AU - Milana, Silvia

AU - De Fazio, Domenico

AU - Tomarchio, Flavia

AU - Iodice, Mario

AU - Coppola, Giuseppe

AU - Ferrari, Andrea C.

PY - 2017/11/28

Y1 - 2017/11/28

N2 - We report vertically illuminated, resonant cavity enhanced, graphene-Si Schottky photodetectors (PDs) operating at 1550 nm. These exploit internal photoemission at the graphene-Si interface. To obtain spectral selectivity and enhance responsivity, the PDs are integrated with an optical cavity, resulting in multiple reflections at resonance, and enhanced absorption in graphene. We get a wavelength-dependent photoresponse with external (internal) responsivity ∼20 mA/W (0.25A/W). The spectral selectivity may be further tuned by varying the cavity resonant wavelength. Our devices pave the way for developing high responsivity hybrid graphene-Si free-space illuminated PDs for optical communications, coherence optical tomography, and light-radars.

AB - We report vertically illuminated, resonant cavity enhanced, graphene-Si Schottky photodetectors (PDs) operating at 1550 nm. These exploit internal photoemission at the graphene-Si interface. To obtain spectral selectivity and enhance responsivity, the PDs are integrated with an optical cavity, resulting in multiple reflections at resonance, and enhanced absorption in graphene. We get a wavelength-dependent photoresponse with external (internal) responsivity ∼20 mA/W (0.25A/W). The spectral selectivity may be further tuned by varying the cavity resonant wavelength. Our devices pave the way for developing high responsivity hybrid graphene-Si free-space illuminated PDs for optical communications, coherence optical tomography, and light-radars.

KW - graphene

KW - internal photoemission

KW - photodetectors

KW - resonant cavity

UR - http://www.scopus.com/inward/record.url?scp=85035346968&partnerID=8YFLogxK

U2 - https://doi.org/10.1021/acsnano.7b04792

DO - https://doi.org/10.1021/acsnano.7b04792

M3 - مقالة

C2 - 29072904

SN - 1936-0851

VL - 11

SP - 10955

EP - 10963

JO - ACS Nano

JF - ACS Nano

IS - 11

ER -

Vertically Illuminated, Resonant Cavity Enhanced, Graphene-Silicon Schottky Photodetectors

Abstract

Keywords

All Science Journal Classification (ASJC) codes

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