Variable temperature probing of minority carrier transport and optical properties in p -Ga2O3

Sushrut Modak; Leonid Chernyak; Alfons Schulte; Corinne Sartel; Vincent Sallet; Yves Dumont; Ekaterine Chikoidze; Xinyi Xia; Fan Ren; Stephen J. Pearton; Arie Ruzin; Denis M. Zhigunov; Sergey S. Kosolobov; Vladimir P. Drachev

doi:https://doi.org/10.1063/5.0086449

Variable temperature probing of minority carrier transport and optical properties in p -Ga₂O₃

Sushrut Modak, Leonid Chernyak, Alfons Schulte, Corinne Sartel, Vincent Sallet, Yves Dumont, Ekaterine Chikoidze, Xinyi Xia, Fan Ren, Stephen J. Pearton, Arie Ruzin, Denis M. Zhigunov, Sergey S. Kosolobov, Vladimir P. Drachev

School of Electrical Engineering

Tel Aviv University

Research output: Contribution to journal › Article › peer-review

Abstract

Electron beam-induced current in the temperature range from 304 to 404 K was employed to measure the minority carrier diffusion length in metal-organic chemical vapor deposition-grown p-Ga2O3 thin films with two different concentrations of majority carriers. The diffusion length of electrons exhibited a decrease with increasing temperature. In addition, the cathodoluminescence emission spectrum identified optical signatures of the acceptor levels associated with the VGa-VO++ complex. The activation energies for the diffusion length decrease and quenching of cathodoluminescence emission with increasing temperature were ascribed to the thermal de-trapping of electrons from VGa-VO++ defect complexes.

Original language	English
Article number	031106
Journal	APL Materials
Volume	10
Issue number	3
DOIs	https://doi.org/10.1063/5.0086449
State	Published - 1 Mar 2022

All Science Journal Classification (ASJC) codes

Materials Science(all)
Engineering(all)

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https://doi.org/10.1063/5.0086449

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title = "Variable temperature probing of minority carrier transport and optical properties in p -Ga2O3",

abstract = "Electron beam-induced current in the temperature range from 304 to 404 K was employed to measure the minority carrier diffusion length in metal-organic chemical vapor deposition-grown p-Ga2O3 thin films with two different concentrations of majority carriers. The diffusion length of electrons exhibited a decrease with increasing temperature. In addition, the cathodoluminescence emission spectrum identified optical signatures of the acceptor levels associated with the VGa-VO++ complex. The activation energies for the diffusion length decrease and quenching of cathodoluminescence emission with increasing temperature were ascribed to the thermal de-trapping of electrons from VGa-VO++ defect complexes.",

author = "Sushrut Modak and Leonid Chernyak and Alfons Schulte and Corinne Sartel and Vincent Sallet and Yves Dumont and Ekaterine Chikoidze and Xinyi Xia and Fan Ren and Pearton, {Stephen J.} and Arie Ruzin and Zhigunov, {Denis M.} and Kosolobov, {Sergey S.} and Drachev, {Vladimir P.}",

note = "Publisher Copyright: {\textcopyright} 2022 Author(s).",

year = "2022",

month = mar,

day = "1",

doi = "https://doi.org/10.1063/5.0086449",

language = "الإنجليزيّة",

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publisher = "American Institute of Physics",

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TY - JOUR

T1 - Variable temperature probing of minority carrier transport and optical properties in p -Ga2O3

AU - Modak, Sushrut

AU - Chernyak, Leonid

AU - Schulte, Alfons

AU - Sartel, Corinne

AU - Sallet, Vincent

AU - Dumont, Yves

AU - Chikoidze, Ekaterine

AU - Xia, Xinyi

AU - Ren, Fan

AU - Pearton, Stephen J.

AU - Ruzin, Arie

AU - Zhigunov, Denis M.

AU - Kosolobov, Sergey S.

AU - Drachev, Vladimir P.

PY - 2022/3/1

Y1 - 2022/3/1

N2 - Electron beam-induced current in the temperature range from 304 to 404 K was employed to measure the minority carrier diffusion length in metal-organic chemical vapor deposition-grown p-Ga2O3 thin films with two different concentrations of majority carriers. The diffusion length of electrons exhibited a decrease with increasing temperature. In addition, the cathodoluminescence emission spectrum identified optical signatures of the acceptor levels associated with the VGa-VO++ complex. The activation energies for the diffusion length decrease and quenching of cathodoluminescence emission with increasing temperature were ascribed to the thermal de-trapping of electrons from VGa-VO++ defect complexes.

AB - Electron beam-induced current in the temperature range from 304 to 404 K was employed to measure the minority carrier diffusion length in metal-organic chemical vapor deposition-grown p-Ga2O3 thin films with two different concentrations of majority carriers. The diffusion length of electrons exhibited a decrease with increasing temperature. In addition, the cathodoluminescence emission spectrum identified optical signatures of the acceptor levels associated with the VGa-VO++ complex. The activation energies for the diffusion length decrease and quenching of cathodoluminescence emission with increasing temperature were ascribed to the thermal de-trapping of electrons from VGa-VO++ defect complexes.

UR - http://www.scopus.com/inward/record.url?scp=85126475787&partnerID=8YFLogxK

U2 - https://doi.org/10.1063/5.0086449

DO - https://doi.org/10.1063/5.0086449

M3 - مقالة

SN - 2166-532X

VL - 10

JO - APL Materials

JF - APL Materials

IS - 3

M1 - 031106

ER -

Variable temperature probing of minority carrier transport and optical properties in p -Ga₂O₃

Abstract

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