Validation and Extension of Local Temperature Evaluation of Conductive Filaments in RRAM Devices

E. Yalon, A. Gavrilov, S. Cohen, D. Ritter

Research output: Contribution to journalArticlepeer-review

Abstract

Local temperature plays a key role in resistive switching random access memory devices. We have previously presented a method for measuring the local filament temperature on a nanometric scale using an MIS bipolar transistor structure. Here, a more detailed analysis of the method is presented. A new calibration technique improves the accuracy of the extracted temperature. Alternative device structures allow validation of the method by the extraction of temperature that equals the ambient temperature when no self-heating occurs as well as extension of the obtained temperature range. The accuracy, prospects, and limitations of the method are discussed.

Original languageEnglish
Article number7272058
Pages (from-to)3671-3677
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume62
Issue number11
DOIs
StatePublished - 1 Nov 2015

Keywords

  • Bipolar transistor
  • resistive random access memory (RRAM)
  • thermometry

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'Validation and Extension of Local Temperature Evaluation of Conductive Filaments in RRAM Devices'. Together they form a unique fingerprint.

Cite this