V-groove-shaped silicon-on-insulator photopolarized activated modulator (SOIP2AM): A polarizing transistor

Jeremy Belhassen; Amos Frisch; Yuval Kapellner; Zeev Zalevsky; Avi Karsenty

doi:10.1364/josaa.37.000046

V-groove-shaped silicon-on-insulator photopolarized activated modulator (SOIP²AM): A polarizing transistor

Jeremy Belhassen, Amos Frisch, Yuval Kapellner, Zeev Zalevsky, Avi Karsenty

Bar-Ilan University - The Alexander Kofkin Faculty of Engineering

Bar-Ilan University

Research output: Contribution to journal › Article › peer-review

Abstract

In this paper, we present the design of a silicon optoelectronic device capable of speeding up processing capabilities. The data in this device are electronic, while the modulation control is optical. It can be used as a building block for the development of optical data processing by silicon-based processors based on typical microelectronics manufacturing processes. A V-groove-based structure fabricated as part of the device allows obtaining enhanced sensitivity to the polarization of the photonic control signal and thus allows obtaining a polarization-sensitive modulator.

Original language	English
Pages (from-to)	46-55
Number of pages	10
Journal	Journal of the Optical Society of America A: Optics and Image Science, and Vision
Volume	37
Issue number	1
DOIs	https://doi.org/10.1364/josaa.37.000046
State	Published - 1 Jan 2020

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Computer Vision and Pattern Recognition

Access to Document

10.1364/josaa.37.000046

Cite this

@article{baf597101cb240769af1b4bd4eb09c79,

title = "V-groove-shaped silicon-on-insulator photopolarized activated modulator (SOIP2AM): A polarizing transistor",

abstract = "In this paper, we present the design of a silicon optoelectronic device capable of speeding up processing capabilities. The data in this device are electronic, while the modulation control is optical. It can be used as a building block for the development of optical data processing by silicon-based processors based on typical microelectronics manufacturing processes. A V-groove-based structure fabricated as part of the device allows obtaining enhanced sensitivity to the polarization of the photonic control signal and thus allows obtaining a polarization-sensitive modulator.",

author = "Jeremy Belhassen and Amos Frisch and Yuval Kapellner and Zeev Zalevsky and Avi Karsenty",

note = "Publisher Copyright: {\textcopyright} 2019 Optical Society of America",

year = "2020",

month = jan,

day = "1",

doi = "10.1364/josaa.37.000046",

language = "الإنجليزيّة",

volume = "37",

pages = "46--55",

journal = "Journal of the Optical Society of America A: Optics and Image Science, and Vision",

issn = "1084-7529",

publisher = "The Optical Society",

number = "1",

}

TY - JOUR

T1 - V-groove-shaped silicon-on-insulator photopolarized activated modulator (SOIP2AM)

T2 - A polarizing transistor

AU - Belhassen, Jeremy

AU - Frisch, Amos

AU - Kapellner, Yuval

AU - Zalevsky, Zeev

AU - Karsenty, Avi

PY - 2020/1/1

Y1 - 2020/1/1

N2 - In this paper, we present the design of a silicon optoelectronic device capable of speeding up processing capabilities. The data in this device are electronic, while the modulation control is optical. It can be used as a building block for the development of optical data processing by silicon-based processors based on typical microelectronics manufacturing processes. A V-groove-based structure fabricated as part of the device allows obtaining enhanced sensitivity to the polarization of the photonic control signal and thus allows obtaining a polarization-sensitive modulator.

AB - In this paper, we present the design of a silicon optoelectronic device capable of speeding up processing capabilities. The data in this device are electronic, while the modulation control is optical. It can be used as a building block for the development of optical data processing by silicon-based processors based on typical microelectronics manufacturing processes. A V-groove-based structure fabricated as part of the device allows obtaining enhanced sensitivity to the polarization of the photonic control signal and thus allows obtaining a polarization-sensitive modulator.

UR - http://www.scopus.com/inward/record.url?scp=85077383527&partnerID=8YFLogxK

U2 - 10.1364/josaa.37.000046

DO - 10.1364/josaa.37.000046

M3 - مقالة

C2 - 32118880

SN - 1084-7529

VL - 37

SP - 46

EP - 55

JO - Journal of the Optical Society of America A: Optics and Image Science, and Vision

JF - Journal of the Optical Society of America A: Optics and Image Science, and Vision

IS - 1

ER -

V-groove-shaped silicon-on-insulator photopolarized activated modulator (SOIP²AM): A polarizing transistor

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this