@article{3f40ec92813b44bf9bb27e1ed7db1d5d,
title = "Ultraviolet to near infrared response of optically sensitive nonvolatile memories based on platinum nano-particles and high-k dielectrics on a silicon on insulator substrate",
abstract = "An optically triggered nonvolatile memory based on platinum nano-particles embedded within a SiO2 and HfO2 dielectric stack on a silicon on insulator (SOI) substrate is presented. The memory cell exhibits a very wide spectral response, from 220 nm to 950 nm; much wider than common photo-detectors fabricated on SOI. It offers several functionalities including a low programming voltage and wide hysteresis of the capacitance-voltage characteristics, an illumination and voltage sweep amplitude dependent hysteresis of the current-voltage characteristics, and plasmonic enhanced, efficient broad-band photo detection.",
author = "V. Mikhelashvili and B. Meyler and Y. Shneider and S. Yofis and J. Salzman and G. Atiya and T. Cohen-Hyams and G. Ankonina and Kaplan, {W. D.} and M. Lisiansky and Y. Roizin and G. Eisenstein",
note = "Funding Information: To summarize, we have introduced a new NVM device constructed on a SOI substrate with Pt nano-particles serving as charge storage nodes, embedded into a dielectric stack of SiO and HfO. The device has unique multi-functionalities; it enables low programming voltages and a large memory window. It can operate in a non-equilibrium depletion state when illuminated, becoming an optically triggered memory cell. Its spectral response is extremely wide due to plasmon enhancement by the ∼5 nm Pt nano particles, ranging from 220 nm to 950 nm, which is much wider than the response of common SOI based photo detectors. Finally, a wide hysteresis in the current-voltage response is observed under illumination. Such a hysteresis is rare, and opens up numerous opportunities for electrical and optoelectronic signal switching and processing. This work was supported by the Israeli Nanotechnology Focal Technology Area on “Nano photonics for Detection”. 2 2",
year = "2013",
month = feb,
day = "21",
doi = "https://doi.org/10.1063/1.4791761",
language = "الإنجليزيّة",
volume = "113",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics",
number = "7",
}