@article{99b9bd27b8124fe3867578408de8d1b4,
title = "Ultra-thin filaments revealed by the dielectric response across the metal-insulator transition in VO2",
abstract = "Temperature dependent dielectric spectroscopy measurements on vanadium dioxide thin films allow us to distinguish between the resistive, capacitive, and inductive contributions to the impedance across the metal-insulator transition (MIT). We developed a single, universal, equivalent circuit model to describe the dielectric behavior above and below the MIT. Our model takes account of phase-coexistence of metallic and insulating regions. We find evidence for the existence at low temperature of ultra-thin threads as described by a resistor-inductor element. A conventional resistor-capacitor element connected in parallel accounts for the insulating phase and the dielectric relaxation.",
author = "Ram{\'i}rez, {J. G.} and Rainer Schmidt and A. Sharoni and G{\'o}mez, {M. E.} and Schuller, {Ivan K.} and Pati{\~n}o, {Edgar J.}",
note = "Funding Information: This work was supported by AFOSR Grant No. FA9550-12-1-0381, COLCIENCIAS, CENM and “El Patrimonio Aut{\'o}nomo Fondo Nacional de Financiamiento para la Ciencia, la Tecnolog{\'i}a y la Innovaci{\'o}n Francisco Jos{\'e} de Caldas” Contract RC—No. 275-2011, and ISF Grant No. 727/11. R.S. wishes to acknowledge a Ram{\'o}n y Cajal Fellowship from the Ministerio de Ciencia e Innovaci{\'o}n (MICINN) in Spain. E.J.P. wishes to acknowledge “Programa Nacional de Ciencias B{\'a}sicas” COLCIENCIAS (No. 120452128168). During the publication process of this manuscript, out-of-plane impedance measurements were published on VO films grown on TiO substrates. These results also imply the coexistence of metallic and insulating phases. 2 2",
year = "2013",
month = feb,
day = "11",
doi = "https://doi.org/10.1063/1.4792052",
language = "الإنجليزيّة",
volume = "102",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "6",
}