Ultra-shallow p-type doping of silicon by performing atomic layer deposition of Al2O3 thin films onto SiO2/Si

Salma Khaldi; Prajith Karadan; Krushnamurty Killi; Clovis Eduardo Mazzotti de Oliveira; Roie Yerushalmi

doi:10.1039/d4cc04510f

Ultra-shallow p-type doping of silicon by performing atomic layer deposition of Al₂O₃ thin films onto SiO₂/Si

Salma Khaldi, Prajith Karadan, Krushnamurty Killi, Clovis Eduardo Mazzotti de Oliveira, Roie Yerushalmi

Institute of Chemistry

The Hebrew University of Jerusalem

Research output: Contribution to journal › Article › peer-review

Abstract

We report an ultra-shallow p-type doping of silicon resulting from the rapid thermal annealing of thin Al₂O₃ films deposited on intrinsic silicon with a native SiO₂ layer, using a common atomic layer deposition process. Characterization revealed a two-stage decrease in sheet resistance, providing insights into the doping mechanism.

Original language	English
Pages (from-to)	11754-11757
Number of pages	4
Journal	Chemical Communications
Volume	60
Issue number	82
DOIs	https://doi.org/10.1039/d4cc04510f
State	Published - 25 Sep 2024

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Catalysis
Ceramics and Composites
General Chemistry
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1039/d4cc04510f

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title = "Ultra-shallow p-type doping of silicon by performing atomic layer deposition of Al2O3 thin films onto SiO2/Si",

abstract = "We report an ultra-shallow p-type doping of silicon resulting from the rapid thermal annealing of thin Al2O3 films deposited on intrinsic silicon with a native SiO2 layer, using a common atomic layer deposition process. Characterization revealed a two-stage decrease in sheet resistance, providing insights into the doping mechanism.",

author = "Salma Khaldi and Prajith Karadan and Krushnamurty Killi and \{de Oliveira\}, \{Clovis Eduardo Mazzotti\} and Roie Yerushalmi",

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T1 - Ultra-shallow p-type doping of silicon by performing atomic layer deposition of Al2O3 thin films onto SiO2/Si

AU - Khaldi, Salma

AU - Karadan, Prajith

AU - Killi, Krushnamurty

AU - de Oliveira, Clovis Eduardo Mazzotti

AU - Yerushalmi, Roie

PY - 2024/9/25

Y1 - 2024/9/25

N2 - We report an ultra-shallow p-type doping of silicon resulting from the rapid thermal annealing of thin Al2O3 films deposited on intrinsic silicon with a native SiO2 layer, using a common atomic layer deposition process. Characterization revealed a two-stage decrease in sheet resistance, providing insights into the doping mechanism.

AB - We report an ultra-shallow p-type doping of silicon resulting from the rapid thermal annealing of thin Al2O3 films deposited on intrinsic silicon with a native SiO2 layer, using a common atomic layer deposition process. Characterization revealed a two-stage decrease in sheet resistance, providing insights into the doping mechanism.

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U2 - 10.1039/d4cc04510f

DO - 10.1039/d4cc04510f

M3 - مقالة

C2 - 39319699

SN - 1359-7345

VL - 60

SP - 11754

EP - 11757

JO - Chemical Communications

JF - Chemical Communications

IS - 82

ER -

Ultra-shallow p-type doping of silicon by performing atomic layer deposition of Al₂O₃ thin films onto SiO₂/Si

Abstract

All Science Journal Classification (ASJC) codes

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