Towards ultimate scaling limits of phase-change memory

F. Xiong; E. Yalon; A. Behnam; C. M. Neumann; K. L. Grosse; S. Deshmukh; E. Pop

doi:10.1109/IEDM.2016.7838342

Towards ultimate scaling limits of phase-change memory

F. Xiong
, E. Yalon
, A. Behnam
, C. M. Neumann
, K. L. Grosse
, S. Deshmukh
, E. Pop

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Data storage based on a reversible material phase transition (e.g. amorphous to crystalline) has been studied for nearly five decades. Yet, it was only during the past five years that some phase-change memory technologies (e.g. GeSbTe) have been approaching the physical scaling limits of the smallest possible memory cell. Here we review recent results from our group and others, which have achieved sub-10 nm scale PCM with switching energy approaching single femtojoules per bit. Fundamental limits could be as low as single attojoules per cubic nanometer of the memory material, although approaching such limits in practice appears strongly limited by electrical and thermal parasitics, i.e. contacts and interfaces.

Original language	English
Title of host publication	2016 IEEE International Electron Devices Meeting, IEDM 2016
Pages	4.1.1-4.1.4
ISBN (Electronic)	9781509039012
DOIs	https://doi.org/10.1109/IEDM.2016.7838342
State	Published - Dec 2016
Externally published	Yes
Event	62nd IEEE International Electron Devices Meeting, IEDM 2016 - San Francisco, United States Duration: 3 Dec 2016 → 7 Dec 2016

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	0

Conference

Conference	62nd IEEE International Electron Devices Meeting, IEDM 2016
Country/Territory	United States
City	San Francisco
Period	3/12/16 → 7/12/16

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM.2016.7838342

Cite this

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title = "Towards ultimate scaling limits of phase-change memory",

abstract = "Data storage based on a reversible material phase transition (e.g. amorphous to crystalline) has been studied for nearly five decades. Yet, it was only during the past five years that some phase-change memory technologies (e.g. GeSbTe) have been approaching the physical scaling limits of the smallest possible memory cell. Here we review recent results from our group and others, which have achieved sub-10 nm scale PCM with switching energy approaching single femtojoules per bit. Fundamental limits could be as low as single attojoules per cubic nanometer of the memory material, although approaching such limits in practice appears strongly limited by electrical and thermal parasitics, i.e. contacts and interfaces.",

author = "F. Xiong and E. Yalon and A. Behnam and Neumann, \{C. M.\} and Grosse, \{K. L.\} and S. Deshmukh and E. Pop",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 62nd IEEE International Electron Devices Meeting, IEDM 2016 ; Conference date: 03-12-2016 Through 07-12-2016",

year = "2016",

month = dec,

doi = "10.1109/IEDM.2016.7838342",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "4.1.1--4.1.4",

booktitle = "2016 IEEE International Electron Devices Meeting, IEDM 2016",

}

Xiong, F, Yalon, E, Behnam, A, Neumann, CM, Grosse, KL, Deshmukh, S & Pop, E 2016, Towards ultimate scaling limits of phase-change memory. in 2016 IEEE International Electron Devices Meeting, IEDM 2016., 7838342, Technical Digest - International Electron Devices Meeting, IEDM, vol. 0, pp. 4.1.1-4.1.4, 62nd IEEE International Electron Devices Meeting, IEDM 2016, San Francisco, United States, 3/12/16. https://doi.org/10.1109/IEDM.2016.7838342

TY - GEN

T1 - Towards ultimate scaling limits of phase-change memory

AU - Xiong, F.

AU - Yalon, E.

AU - Behnam, A.

AU - Neumann, C. M.

AU - Grosse, K. L.

AU - Deshmukh, S.

AU - Pop, E.

PY - 2016/12

Y1 - 2016/12

N2 - Data storage based on a reversible material phase transition (e.g. amorphous to crystalline) has been studied for nearly five decades. Yet, it was only during the past five years that some phase-change memory technologies (e.g. GeSbTe) have been approaching the physical scaling limits of the smallest possible memory cell. Here we review recent results from our group and others, which have achieved sub-10 nm scale PCM with switching energy approaching single femtojoules per bit. Fundamental limits could be as low as single attojoules per cubic nanometer of the memory material, although approaching such limits in practice appears strongly limited by electrical and thermal parasitics, i.e. contacts and interfaces.

AB - Data storage based on a reversible material phase transition (e.g. amorphous to crystalline) has been studied for nearly five decades. Yet, it was only during the past five years that some phase-change memory technologies (e.g. GeSbTe) have been approaching the physical scaling limits of the smallest possible memory cell. Here we review recent results from our group and others, which have achieved sub-10 nm scale PCM with switching energy approaching single femtojoules per bit. Fundamental limits could be as low as single attojoules per cubic nanometer of the memory material, although approaching such limits in practice appears strongly limited by electrical and thermal parasitics, i.e. contacts and interfaces.

UR - https://www.scopus.com/pages/publications/85014473035

U2 - 10.1109/IEDM.2016.7838342

DO - 10.1109/IEDM.2016.7838342

M3 - Conference contribution

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 4.1.1-4.1.4

BT - 2016 IEEE International Electron Devices Meeting, IEDM 2016

T2 - 62nd IEEE International Electron Devices Meeting, IEDM 2016

Y2 - 3 December 2016 through 7 December 2016

ER -

Towards ultimate scaling limits of phase-change memory

Abstract

Publication series

Conference

ASJC Scopus subject areas

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