Towards 500 GHz Non-volatile Monolayer 6G Switches

Myungsoo Kim; Guillaume Docoumau; Simon Skrzypczak; Pascal Szriftgiser; Sung Jin Yang; Nicolas Wainstein; Keren Stern; Henri Happy; Eilam Yalon; Emiliano Pallecchi; Deji Akinwande

doi:10.1109/IMS37962.2022.9865419

Towards 500 GHz Non-volatile Monolayer 6G Switches

Myungsoo Kim, Guillaume Docoumau, Simon Skrzypczak, Pascal Szriftgiser, Sung Jin Yang, Nicolas Wainstein, Keren Stern, Henri Happy, Eilam Yalon, Emiliano Pallecchi, Deji Akinwande

Technion - Israel Institute of Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

High performance non-volatile analog switches based on monolayer MoS2 are realized up to 480 GHz, covering the sixth-generation (6G) communication band. Due to its robust layered structure, crystalline MoS2 enables low insertion loss and high isolation radio-frequency (RF) switch that utilizes its memristive property. Compared to other emerging switch technologies based on MEMS, RRAM, and phase-change memory (PCM); MoS2 switches show superior sub-nanosecond pulse switching, low power consumption, and high data-rate operation. We demonstrate eye-diagram and constellation diagram with various modulation methods and remarkable data transmission rate up to 100 Gbit/s in a non-volatile RF switch. Notably, the operating frequencies are about 10x higher than previous reports on RF switches. This monolayer RF switch is expected to enable analog components for next-generation 6G communication and connectivity front-end systems.

Original language	English
Title of host publication	2022 IEEE/MTT-S International Microwave Symposium, IMS 2022
Pages	902-905
Number of pages	4
ISBN (Electronic)	9781665496131
DOIs	https://doi.org/10.1109/IMS37962.2022.9865419
State	Published - 2022
Event	2022 IEEE/MTT-S International Microwave Symposium, IMS 2022 - Denver, United States Duration: 19 Jun 2022 → 24 Jun 2022

Publication series

Name	IEEE MTT-S International Microwave Symposium Digest
Volume	2022-June

Conference

Conference	2022 IEEE/MTT-S International Microwave Symposium, IMS 2022
Country/Territory	United States
City	Denver
Period	19/06/22 → 24/06/22

Keywords

2D materials
6G
RF switch

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Radiation
Electrical and Electronic Engineering

Access to Document

10.1109/IMS37962.2022.9865419

Cite this

Kim, M., Docoumau, G., Skrzypczak, S., Szriftgiser, P., Yang, S. J., Wainstein, N., Stern, K., Happy, H., Yalon, E., Pallecchi, E., & Akinwande, D. (2022). Towards 500 GHz Non-volatile Monolayer 6G Switches. In 2022 IEEE/MTT-S International Microwave Symposium, IMS 2022 (pp. 902-905). (IEEE MTT-S International Microwave Symposium Digest; Vol. 2022-June). https://doi.org/10.1109/IMS37962.2022.9865419

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title = "Towards 500 GHz Non-volatile Monolayer 6G Switches",

abstract = "High performance non-volatile analog switches based on monolayer MoS2 are realized up to 480 GHz, covering the sixth-generation (6G) communication band. Due to its robust layered structure, crystalline MoS2 enables low insertion loss and high isolation radio-frequency (RF) switch that utilizes its memristive property. Compared to other emerging switch technologies based on MEMS, RRAM, and phase-change memory (PCM); MoS2 switches show superior sub-nanosecond pulse switching, low power consumption, and high data-rate operation. We demonstrate eye-diagram and constellation diagram with various modulation methods and remarkable data transmission rate up to 100 Gbit/s in a non-volatile RF switch. Notably, the operating frequencies are about 10x higher than previous reports on RF switches. This monolayer RF switch is expected to enable analog components for next-generation 6G communication and connectivity front-end systems.",

keywords = "2D materials, 6G, RF switch",

author = "Myungsoo Kim and Guillaume Docoumau and Simon Skrzypczak and Pascal Szriftgiser and Yang, {Sung Jin} and Nicolas Wainstein and Keren Stern and Henri Happy and Eilam Yalon and Emiliano Pallecchi and Deji Akinwande",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 IEEE/MTT-S International Microwave Symposium, IMS 2022 ; Conference date: 19-06-2022 Through 24-06-2022",

year = "2022",

doi = "10.1109/IMS37962.2022.9865419",

language = "الإنجليزيّة",

series = "IEEE MTT-S International Microwave Symposium Digest",

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booktitle = "2022 IEEE/MTT-S International Microwave Symposium, IMS 2022",

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Kim, M, Docoumau, G, Skrzypczak, S, Szriftgiser, P, Yang, SJ, Wainstein, N, Stern, K, Happy, H, Yalon, E, Pallecchi, E & Akinwande, D 2022, Towards 500 GHz Non-volatile Monolayer 6G Switches. in 2022 IEEE/MTT-S International Microwave Symposium, IMS 2022. IEEE MTT-S International Microwave Symposium Digest, vol. 2022-June, pp. 902-905, 2022 IEEE/MTT-S International Microwave Symposium, IMS 2022, Denver, United States, 19/06/22. https://doi.org/10.1109/IMS37962.2022.9865419

TY - GEN

T1 - Towards 500 GHz Non-volatile Monolayer 6G Switches

AU - Kim, Myungsoo

AU - Docoumau, Guillaume

AU - Skrzypczak, Simon

AU - Szriftgiser, Pascal

AU - Yang, Sung Jin

AU - Wainstein, Nicolas

AU - Stern, Keren

AU - Happy, Henri

AU - Yalon, Eilam

AU - Pallecchi, Emiliano

AU - Akinwande, Deji

PY - 2022

Y1 - 2022

N2 - High performance non-volatile analog switches based on monolayer MoS2 are realized up to 480 GHz, covering the sixth-generation (6G) communication band. Due to its robust layered structure, crystalline MoS2 enables low insertion loss and high isolation radio-frequency (RF) switch that utilizes its memristive property. Compared to other emerging switch technologies based on MEMS, RRAM, and phase-change memory (PCM); MoS2 switches show superior sub-nanosecond pulse switching, low power consumption, and high data-rate operation. We demonstrate eye-diagram and constellation diagram with various modulation methods and remarkable data transmission rate up to 100 Gbit/s in a non-volatile RF switch. Notably, the operating frequencies are about 10x higher than previous reports on RF switches. This monolayer RF switch is expected to enable analog components for next-generation 6G communication and connectivity front-end systems.

AB - High performance non-volatile analog switches based on monolayer MoS2 are realized up to 480 GHz, covering the sixth-generation (6G) communication band. Due to its robust layered structure, crystalline MoS2 enables low insertion loss and high isolation radio-frequency (RF) switch that utilizes its memristive property. Compared to other emerging switch technologies based on MEMS, RRAM, and phase-change memory (PCM); MoS2 switches show superior sub-nanosecond pulse switching, low power consumption, and high data-rate operation. We demonstrate eye-diagram and constellation diagram with various modulation methods and remarkable data transmission rate up to 100 Gbit/s in a non-volatile RF switch. Notably, the operating frequencies are about 10x higher than previous reports on RF switches. This monolayer RF switch is expected to enable analog components for next-generation 6G communication and connectivity front-end systems.

KW - 2D materials

KW - 6G

KW - RF switch

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U2 - 10.1109/IMS37962.2022.9865419

DO - 10.1109/IMS37962.2022.9865419

M3 - منشور من مؤتمر

T3 - IEEE MTT-S International Microwave Symposium Digest

SP - 902

EP - 905

BT - 2022 IEEE/MTT-S International Microwave Symposium, IMS 2022

T2 - 2022 IEEE/MTT-S International Microwave Symposium, IMS 2022

Y2 - 19 June 2022 through 24 June 2022

ER -

Towards 500 GHz Non-volatile Monolayer 6G Switches

Abstract

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Keywords

All Science Journal Classification (ASJC) codes

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