Toward Monolithic GaN on Si Inter-Sub-Band Infrared Optoelectronics

Idan Yokev; M. Agrawal; B. Eyadat; V. Kostianovskii; L. Gal; A. Cohen; L. Kornblum; N. Dharmarasu; K. Radhakrishnan; M. Orenstein; Gad Bahir

doi:10.1109/TED.2024.3370140

Toward Monolithic GaN on Si Inter-Sub-Band Infrared Optoelectronics

Idan Yokev, M. Agrawal, B. Eyadat, V. Kostianovskii, L. Gal, A. Cohen, L. Kornblum, N. Dharmarasu, K. Radhakrishnan, M. Orenstein, Gad Bahir

Technion - Israel Institute of Technology

Research output: Contribution to journal › Article › peer-review

Abstract

We have successfully demonstrated the first CMOS-compatible monolithic epitaxial integration of GaN-based infrared (IR) detectors on Si. The device is a GaN/AlGaN quantum cascade detector (QCD) grown selectively in windows on a 4-in Si (111) substrate using plasma-assisted molecular beam epitaxy. The CMOS compatibility of the QCD growth method was verified by applying it to Si circuitry fabricated on (100) surface of a double hetero-oriented silicon on insulator (SOI) substrate. The photo signal, centered at a wavelength of 4.6 μm, was measured at 110 K. The zero-bias responsivity of 81 μA /W at 18 K and detectivity of 1.2×107 Jones were recorded.

Original language	English
Pages (from-to)	2497-2502
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	71
Issue number	4
DOIs	https://doi.org/10.1109/TED.2024.3370140
State	Published - 1 Apr 2024

Keywords

Aluminum nitride
Detectors
Electrons
Gallium compounds
III-V semiconductor materials
Silicon
Substrates
Surface treatment
integrated optics
photodetectors
quantum well (QW) devices

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2024.3370140

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title = "Toward Monolithic GaN on Si Inter-Sub-Band Infrared Optoelectronics",

abstract = "We have successfully demonstrated the first CMOS-compatible monolithic epitaxial integration of GaN-based infrared (IR) detectors on Si. The device is a GaN/AlGaN quantum cascade detector (QCD) grown selectively in windows on a 4-in Si (111) substrate using plasma-assisted molecular beam epitaxy. The CMOS compatibility of the QCD growth method was verified by applying it to Si circuitry fabricated on (100) surface of a double hetero-oriented silicon on insulator (SOI) substrate. The photo signal, centered at a wavelength of 4.6 μm, was measured at 110 K. The zero-bias responsivity of 81 μA /W at 18 K and detectivity of 1.2×107 Jones were recorded.",

keywords = "Aluminum nitride, Detectors, Electrons, Gallium compounds, III-V semiconductor materials, Silicon, Substrates, Surface treatment, integrated optics, photodetectors, quantum well (QW) devices",

author = "Idan Yokev and M. Agrawal and B. Eyadat and V. Kostianovskii and L. Gal and A. Cohen and L. Kornblum and N. Dharmarasu and K. Radhakrishnan and M. Orenstein and Gad Bahir",

note = "Publisher Copyright: IEEE",

year = "2024",

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day = "1",

doi = "10.1109/TED.2024.3370140",

language = "الإنجليزيّة",

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TY - JOUR

T1 - Toward Monolithic GaN on Si Inter-Sub-Band Infrared Optoelectronics

AU - Yokev, Idan

AU - Agrawal, M.

AU - Eyadat, B.

AU - Kostianovskii, V.

AU - Gal, L.

AU - Cohen, A.

AU - Kornblum, L.

AU - Dharmarasu, N.

AU - Radhakrishnan, K.

AU - Orenstein, M.

AU - Bahir, Gad

N1 - Publisher Copyright: IEEE

PY - 2024/4/1

Y1 - 2024/4/1

N2 - We have successfully demonstrated the first CMOS-compatible monolithic epitaxial integration of GaN-based infrared (IR) detectors on Si. The device is a GaN/AlGaN quantum cascade detector (QCD) grown selectively in windows on a 4-in Si (111) substrate using plasma-assisted molecular beam epitaxy. The CMOS compatibility of the QCD growth method was verified by applying it to Si circuitry fabricated on (100) surface of a double hetero-oriented silicon on insulator (SOI) substrate. The photo signal, centered at a wavelength of 4.6 μm, was measured at 110 K. The zero-bias responsivity of 81 μA /W at 18 K and detectivity of 1.2×107 Jones were recorded.

AB - We have successfully demonstrated the first CMOS-compatible monolithic epitaxial integration of GaN-based infrared (IR) detectors on Si. The device is a GaN/AlGaN quantum cascade detector (QCD) grown selectively in windows on a 4-in Si (111) substrate using plasma-assisted molecular beam epitaxy. The CMOS compatibility of the QCD growth method was verified by applying it to Si circuitry fabricated on (100) surface of a double hetero-oriented silicon on insulator (SOI) substrate. The photo signal, centered at a wavelength of 4.6 μm, was measured at 110 K. The zero-bias responsivity of 81 μA /W at 18 K and detectivity of 1.2×107 Jones were recorded.

KW - Aluminum nitride

KW - Detectors

KW - Electrons

KW - Gallium compounds

KW - III-V semiconductor materials

KW - Silicon

KW - Substrates

KW - Surface treatment

KW - integrated optics

KW - photodetectors

KW - quantum well (QW) devices

UR - http://www.scopus.com/inward/record.url?scp=85187372046&partnerID=8YFLogxK

U2 - 10.1109/TED.2024.3370140

DO - 10.1109/TED.2024.3370140

M3 - مقالة

SN - 0018-9383

VL - 71

SP - 2497

EP - 2502

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 4

ER -

Toward Monolithic GaN on Si Inter-Sub-Band Infrared Optoelectronics

Abstract

Keywords

All Science Journal Classification (ASJC) codes

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