Thermal modeling of metal oxides for highly scaled nanoscale RRAM

Sanchit Deshmukh; Raisul Islam; Clare Chen; Eilam Yalon; Krishna C. Saraswat; Eric Pop

doi:https://doi.org/10.1109/SISPAD.2015.7292314

Thermal modeling of metal oxides for highly scaled nanoscale RRAM

Sanchit Deshmukh, Raisul Islam, Clare Chen, Eilam Yalon, Krishna C. Saraswat, Eric Pop

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Resistive random access memory (RRAM) is a promising candidate for future non-volatile memory applications due to its potential for performance, scalability and compatibility with CMOS processing. The switching in the RRAM cell occurs via formation of conductive filaments composed of sub-stoichiometric oxide (SSO). In this work, we model thermal conduction in a pair of neighboring memory cells, taking into account more detailed phonon scattering effects in the SSO than previously considered. We find that for devices scaled below 10 nm in bit spacing, the neighboring filament temperature can increase significantly even when only the phononic heat conduction is considered. This increase is underestimated if using the previous state-of-the-art model of thermal conductivity of SSO, i.e. linear interpolation between metal and stoichiometric oxide thermal conductivity.

Original language	English
Title of host publication	2015 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015
Pages	281-284
Number of pages	4
ISBN (Electronic)	9781467378581
DOIs	https://doi.org/10.1109/SISPAD.2015.7292314
State	Published - 5 Oct 2015
Externally published	Yes
Event	20th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015 - Washington, United States Duration: 9 Sep 2015 → 11 Sep 2015

Publication series

Name	International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
Volume	2015-October

Conference

Conference	20th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015
Country/Territory	United States
City	Washington
Period	9/09/15 → 11/09/15

Keywords

HfO
RRAM
mass defect scattering
thermal conductivity
thermal cross-talk

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Computer Science Applications
Modelling and Simulation

Access to Document

https://doi.org/10.1109/SISPAD.2015.7292314

Cite this

Deshmukh, S., Islam, R., Chen, C., Yalon, E., Saraswat, K. C., & Pop, E. (2015). Thermal modeling of metal oxides for highly scaled nanoscale RRAM. In 2015 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015 (pp. 281-284). Article 7292314 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD; Vol. 2015-October). https://doi.org/10.1109/SISPAD.2015.7292314

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title = "Thermal modeling of metal oxides for highly scaled nanoscale RRAM",

abstract = "Resistive random access memory (RRAM) is a promising candidate for future non-volatile memory applications due to its potential for performance, scalability and compatibility with CMOS processing. The switching in the RRAM cell occurs via formation of conductive filaments composed of sub-stoichiometric oxide (SSO). In this work, we model thermal conduction in a pair of neighboring memory cells, taking into account more detailed phonon scattering effects in the SSO than previously considered. We find that for devices scaled below 10 nm in bit spacing, the neighboring filament temperature can increase significantly even when only the phononic heat conduction is considered. This increase is underestimated if using the previous state-of-the-art model of thermal conductivity of SSO, i.e. linear interpolation between metal and stoichiometric oxide thermal conductivity.",

keywords = "HfO, RRAM, mass defect scattering, thermal conductivity, thermal cross-talk",

author = "Sanchit Deshmukh and Raisul Islam and Clare Chen and Eilam Yalon and Saraswat, {Krishna C.} and Eric Pop",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 20th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015 ; Conference date: 09-09-2015 Through 11-09-2015",

year = "2015",

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doi = "https://doi.org/10.1109/SISPAD.2015.7292314",

language = "الإنجليزيّة",

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Deshmukh, S, Islam, R, Chen, C, Yalon, E, Saraswat, KC & Pop, E 2015, Thermal modeling of metal oxides for highly scaled nanoscale RRAM. in 2015 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015., 7292314, International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, vol. 2015-October, pp. 281-284, 20th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015, Washington, United States, 9/09/15. https://doi.org/10.1109/SISPAD.2015.7292314

Thermal modeling of metal oxides for highly scaled nanoscale RRAM. / Deshmukh, Sanchit; Islam, Raisul; Chen, Clare et al.
2015 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015. 2015. p. 281-284 7292314 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD; Vol. 2015-October).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Thermal modeling of metal oxides for highly scaled nanoscale RRAM

AU - Deshmukh, Sanchit

AU - Islam, Raisul

AU - Chen, Clare

AU - Yalon, Eilam

AU - Saraswat, Krishna C.

AU - Pop, Eric

PY - 2015/10/5

Y1 - 2015/10/5

N2 - Resistive random access memory (RRAM) is a promising candidate for future non-volatile memory applications due to its potential for performance, scalability and compatibility with CMOS processing. The switching in the RRAM cell occurs via formation of conductive filaments composed of sub-stoichiometric oxide (SSO). In this work, we model thermal conduction in a pair of neighboring memory cells, taking into account more detailed phonon scattering effects in the SSO than previously considered. We find that for devices scaled below 10 nm in bit spacing, the neighboring filament temperature can increase significantly even when only the phononic heat conduction is considered. This increase is underestimated if using the previous state-of-the-art model of thermal conductivity of SSO, i.e. linear interpolation between metal and stoichiometric oxide thermal conductivity.

AB - Resistive random access memory (RRAM) is a promising candidate for future non-volatile memory applications due to its potential for performance, scalability and compatibility with CMOS processing. The switching in the RRAM cell occurs via formation of conductive filaments composed of sub-stoichiometric oxide (SSO). In this work, we model thermal conduction in a pair of neighboring memory cells, taking into account more detailed phonon scattering effects in the SSO than previously considered. We find that for devices scaled below 10 nm in bit spacing, the neighboring filament temperature can increase significantly even when only the phononic heat conduction is considered. This increase is underestimated if using the previous state-of-the-art model of thermal conductivity of SSO, i.e. linear interpolation between metal and stoichiometric oxide thermal conductivity.

KW - HfO

KW - RRAM

KW - mass defect scattering

KW - thermal conductivity

KW - thermal cross-talk

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M3 - منشور من مؤتمر

T3 - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

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EP - 284

BT - 2015 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015

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ER -

Deshmukh S, Islam R, Chen C, Yalon E, Saraswat KC, Pop E. Thermal modeling of metal oxides for highly scaled nanoscale RRAM. In 2015 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015. 2015. p. 281-284. 7292314. (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). doi: https://doi.org/10.1109/SISPAD.2015.7292314

Thermal modeling of metal oxides for highly scaled nanoscale RRAM

Abstract

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Keywords

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