Thermal boundary conductance of the MOS2-SiO2 interface

Saurabh V. Suryavanshi; Alexander J. Gabourie; Amir Barati Farimani; Eilam Yalon; Eric Pop

doi:https://doi.org/10.1109/NANO.2017.8117371

Thermal boundary conductance of the MOS₂-SiO₂ interface

Saurabh V. Suryavanshi, Alexander J. Gabourie, Amir Barati Farimani, Eilam Yalon, Eric Pop

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We investigate heat conduction across the interface of a monolayer semiconductor and its supporting substrate using molecular dynamics (MD) simulations. For the first time, we show that for the interface between MoS2 and SiO2, thermal boundary conductance (TBC) is 15.5 ± 1.5 MWK^-1m^-2. The TBC is found to increase proportionally with the strength of the van der Waals interactions and is largely independent of temperature between 200 and 400 K. We also find that bi- and tri-layer MoS₂ on SiO₂ have somewhat higher TBC compared to single-layer MoS₂ on SiO₂. We compare the TBC simulation results with experimental data from Raman thermometry, finding close agreement between simulation and experiments.

Original language	English
Title of host publication	2017 IEEE 17th International Conference on Nanotechnology, NANO 2017
Pages	26-29
Number of pages	4
ISBN (Electronic)	9781509030286
DOIs	https://doi.org/10.1109/NANO.2017.8117371
State	Published - 21 Nov 2017
Externally published	Yes
Event	17th IEEE International Conference on Nanotechnology, NANO 2017 - Pittsburgh, United States Duration: 25 Jul 2017 → 28 Jul 2017

Publication series

Name	2017 IEEE 17th International Conference on Nanotechnology, NANO 2017

Conference

Conference	17th IEEE International Conference on Nanotechnology, NANO 2017
Country/Territory	United States
City	Pittsburgh
Period	25/07/17 → 28/07/17

Keywords

2D materials
MoS
Thermal boundary conductance
molecular dynamics
self-heating

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces, Coatings and Films
Electrical and Electronic Engineering

Access to Document

https://doi.org/10.1109/NANO.2017.8117371

Cite this

@inproceedings{9dbcb38d2bc0483ea093d4308ccfb88d,

title = "Thermal boundary conductance of the MOS2-SiO2 interface",

abstract = "We investigate heat conduction across the interface of a monolayer semiconductor and its supporting substrate using molecular dynamics (MD) simulations. For the first time, we show that for the interface between MoS2 and SiO2, thermal boundary conductance (TBC) is 15.5 ± 1.5 MWK-1m-2. The TBC is found to increase proportionally with the strength of the van der Waals interactions and is largely independent of temperature between 200 and 400 K. We also find that bi- and tri-layer MoS2 on SiO2 have somewhat higher TBC compared to single-layer MoS2 on SiO2. We compare the TBC simulation results with experimental data from Raman thermometry, finding close agreement between simulation and experiments.",

keywords = "2D materials, MoS, Thermal boundary conductance, molecular dynamics, self-heating",

author = "Suryavanshi, {Saurabh V.} and Gabourie, {Alexander J.} and Farimani, {Amir Barati} and Eilam Yalon and Eric Pop",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 17th IEEE International Conference on Nanotechnology, NANO 2017 ; Conference date: 25-07-2017 Through 28-07-2017",

year = "2017",

month = nov,

day = "21",

doi = "https://doi.org/10.1109/NANO.2017.8117371",

language = "الإنجليزيّة",

series = "2017 IEEE 17th International Conference on Nanotechnology, NANO 2017",

pages = "26--29",

booktitle = "2017 IEEE 17th International Conference on Nanotechnology, NANO 2017",

}

Suryavanshi, SV, Gabourie, AJ, Farimani, AB, Yalon, E & Pop, E 2017, Thermal boundary conductance of the MOS₂-SiO₂ interface. in 2017 IEEE 17th International Conference on Nanotechnology, NANO 2017., 8117371, 2017 IEEE 17th International Conference on Nanotechnology, NANO 2017, pp. 26-29, 17th IEEE International Conference on Nanotechnology, NANO 2017, Pittsburgh, United States, 25/07/17. https://doi.org/10.1109/NANO.2017.8117371

Thermal boundary conductance of the MOS₂-SiO₂ interface. / Suryavanshi, Saurabh V.; Gabourie, Alexander J.; Farimani, Amir Barati et al.
2017 IEEE 17th International Conference on Nanotechnology, NANO 2017. 2017. p. 26-29 8117371 (2017 IEEE 17th International Conference on Nanotechnology, NANO 2017).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Thermal boundary conductance of the MOS2-SiO2 interface

AU - Suryavanshi, Saurabh V.

AU - Gabourie, Alexander J.

AU - Farimani, Amir Barati

AU - Yalon, Eilam

AU - Pop, Eric

PY - 2017/11/21

Y1 - 2017/11/21

N2 - We investigate heat conduction across the interface of a monolayer semiconductor and its supporting substrate using molecular dynamics (MD) simulations. For the first time, we show that for the interface between MoS2 and SiO2, thermal boundary conductance (TBC) is 15.5 ± 1.5 MWK-1m-2. The TBC is found to increase proportionally with the strength of the van der Waals interactions and is largely independent of temperature between 200 and 400 K. We also find that bi- and tri-layer MoS2 on SiO2 have somewhat higher TBC compared to single-layer MoS2 on SiO2. We compare the TBC simulation results with experimental data from Raman thermometry, finding close agreement between simulation and experiments.

AB - We investigate heat conduction across the interface of a monolayer semiconductor and its supporting substrate using molecular dynamics (MD) simulations. For the first time, we show that for the interface between MoS2 and SiO2, thermal boundary conductance (TBC) is 15.5 ± 1.5 MWK-1m-2. The TBC is found to increase proportionally with the strength of the van der Waals interactions and is largely independent of temperature between 200 and 400 K. We also find that bi- and tri-layer MoS2 on SiO2 have somewhat higher TBC compared to single-layer MoS2 on SiO2. We compare the TBC simulation results with experimental data from Raman thermometry, finding close agreement between simulation and experiments.

KW - 2D materials

KW - MoS

KW - Thermal boundary conductance

KW - molecular dynamics

KW - self-heating

UR - http://www.scopus.com/inward/record.url?scp=85041206934&partnerID=8YFLogxK

U2 - https://doi.org/10.1109/NANO.2017.8117371

DO - https://doi.org/10.1109/NANO.2017.8117371

M3 - منشور من مؤتمر

T3 - 2017 IEEE 17th International Conference on Nanotechnology, NANO 2017

SP - 26

EP - 29

BT - 2017 IEEE 17th International Conference on Nanotechnology, NANO 2017

T2 - 17th IEEE International Conference on Nanotechnology, NANO 2017

Y2 - 25 July 2017 through 28 July 2017

ER -