Theory of nonradiative transitions of hot carriers in Si/SiO2 nanocrystals

A. N. Poddubny; A. S. Moskalenko; A. A. Prokofiev; S. V. Goupalov; I. N. Yassievich

doi:10.1002/pssc.201000407

Theory of nonradiative transitions of hot carriers in Si/SiO₂ nanocrystals

A. N. Poddubny, A. S. Moskalenko, A. A. Prokofiev, S. V. Goupalov, I. N. Yassievich

Research output: Contribution to journal › Article › peer-review

Abstract

Energy relaxation of hot electrons and holes confined in silicon nanocrystals embedded in SiO₂ matrix is studied theoretically. Phonon-assisted transitions rates strongly depend on nanocrystal diameter ranging from 10⁸ s^-1 to 10^-12 s^-1. The Auger-like transitions are found to be considerably faster and lead to rapid energy exchange within electron-hole pair.

Original language	English
Pages (from-to)	985-990
Number of pages	6
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	8
Issue number	3
DOIs	https://doi.org/10.1002/pssc.201000407
State	Published - Mar 2011
Externally published	Yes

All Science Journal Classification (ASJC) codes

Condensed Matter Physics

Access to Document

10.1002/pssc.201000407

Cite this

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title = "Theory of nonradiative transitions of hot carriers in Si/SiO2 nanocrystals",

abstract = "Energy relaxation of hot electrons and holes confined in silicon nanocrystals embedded in SiO2 matrix is studied theoretically. Phonon-assisted transitions rates strongly depend on nanocrystal diameter ranging from 108 s-1 to 10-12 s-1. The Auger-like transitions are found to be considerably faster and lead to rapid energy exchange within electron-hole pair.",

author = "Poddubny, {A. N.} and Moskalenko, {A. S.} and Prokofiev, {A. A.} and Goupalov, {S. V.} and Yassievich, {I. N.}",

year = "2011",

month = mar,

doi = "10.1002/pssc.201000407",

language = "الإنجليزيّة",

volume = "8",

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journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

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T1 - Theory of nonradiative transitions of hot carriers in Si/SiO2 nanocrystals

AU - Poddubny, A. N.

AU - Moskalenko, A. S.

AU - Prokofiev, A. A.

AU - Goupalov, S. V.

AU - Yassievich, I. N.

PY - 2011/3

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AB - Energy relaxation of hot electrons and holes confined in silicon nanocrystals embedded in SiO2 matrix is studied theoretically. Phonon-assisted transitions rates strongly depend on nanocrystal diameter ranging from 108 s-1 to 10-12 s-1. The Auger-like transitions are found to be considerably faster and lead to rapid energy exchange within electron-hole pair.

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DO - 10.1002/pssc.201000407

M3 - مقالة

SN - 1862-6351

VL - 8

SP - 985

EP - 990

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

IS - 3