The MSET as an IC building block

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Owing to its multigate structure, the Multistate Electrostatically Formed Nanowire Transistor (MSET) enables the implementation of various fundamental analog and digital functions with fewer components compared, e.g., with CMOS technology. Due to its low off-current and overall low energy dissipation, the MSET can be regarded ideal for low-power IoT applications that operate at moderate frequencies. We overview in this brief the MSET and present its framework in the context of the digital gates commonly employed in integrated circuits. In particular, an analysis of an MSET-based NAND gate is outlined, and a general overview of its performance is provided.

Original languageEnglish
Title of host publicationJoint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings
EditorsAndroula G. Nassiopoulou, Panagiotis Sarafis
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages64-66
Number of pages3
ISBN (Electronic)9781509053131
DOIs
StatePublished - 29 Jun 2017
Event2017 Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Athens, Greece
Duration: 3 Apr 20175 Apr 2017

Publication series

NameJoint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings

Conference

Conference2017 Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017
Country/TerritoryGreece
CityAthens
Period3/04/175/04/17

Keywords

  • Digital functions
  • Low-Power Dissipation
  • Multigate Transistor
  • Nanowire Transistor

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Electrical and Electronic Engineering

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