The mechanism of operation of lateral and vertical organic field effect transistors

Ariel J. Ben-Sasson; Michael Greenman; Yohai Roichman; Nir Tessler

doi:10.1002/ijch.201400040

The mechanism of operation of lateral and vertical organic field effect transistors

Ariel J. Ben-Sasson, Michael Greenman, Yohai Roichman, Nir Tessler

Technion - Israel Institute of Technology

Research output: Contribution to journal › Review article › peer-review

Abstract

In this contribution, we describe the working principles of organic field effect transistors. To place it in context, we start with a brief description of some aspects of semiconductor field effect transistors. We then describe the standard structure and properties of laterally aligned field effect transistors and at the end, touch upon some properties of the newly developed vertically stacked field effect transistors.

Original language	English
Pages (from-to)	568-585
Number of pages	18
Journal	Israel Journal of Chemistry
Volume	54
Issue number	5-6
DOIs	https://doi.org/10.1002/ijch.201400040
State	Published - Jun 2014

Keywords

VOFET
molecular electronics
organic devices
polymers
transistors

All Science Journal Classification (ASJC) codes

General Chemistry

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10.1002/ijch.201400040

Cite this

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title = "The mechanism of operation of lateral and vertical organic field effect transistors",

abstract = "In this contribution, we describe the working principles of organic field effect transistors. To place it in context, we start with a brief description of some aspects of semiconductor field effect transistors. We then describe the standard structure and properties of laterally aligned field effect transistors and at the end, touch upon some properties of the newly developed vertically stacked field effect transistors.",

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author = "Ben-Sasson, \{Ariel J.\} and Michael Greenman and Yohai Roichman and Nir Tessler",

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doi = "10.1002/ijch.201400040",

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AU - Roichman, Yohai

AU - Tessler, Nir

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Y1 - 2014/6

N2 - In this contribution, we describe the working principles of organic field effect transistors. To place it in context, we start with a brief description of some aspects of semiconductor field effect transistors. We then describe the standard structure and properties of laterally aligned field effect transistors and at the end, touch upon some properties of the newly developed vertically stacked field effect transistors.

AB - In this contribution, we describe the working principles of organic field effect transistors. To place it in context, we start with a brief description of some aspects of semiconductor field effect transistors. We then describe the standard structure and properties of laterally aligned field effect transistors and at the end, touch upon some properties of the newly developed vertically stacked field effect transistors.

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KW - molecular electronics

KW - organic devices

KW - polymers

KW - transistors

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DO - 10.1002/ijch.201400040

M3 - مقالة مرجعية

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JO - Israel Journal of Chemistry

JF - Israel Journal of Chemistry

IS - 5-6

ER -

The mechanism of operation of lateral and vertical organic field effect transistors

Abstract

Keywords

All Science Journal Classification (ASJC) codes

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