The Kondo effect and coherent transport in stacking-faults-free wurtzite InAs nanowires

Andrey V. Kretinin, Ronit Popovitz-Biro, Diana Mahalu, Yuval Oreg, Moty Heiblum, Hadas Shtrikman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The crystalline perfection of wurtzite InAs nanowires grown by the Vapor-Liquid-Solid Molecular Beam Epitaxy technique in combination with careful fabrication of nanowire-based FET devices allowed us to observe a variety of phenomena associated with mesoscopic coherent transport. When the single nanowire channel is nearly pinched-off the Coulomb blockade conductance oscillations exhibit well-pronounced Kondo effect approaching the conductance unitary limit. At some gate voltages the breaking of odd-even parity of the Kondo effect related to the formation of the triplet ground state is observed. At higher gate voltages when the channel is open we observe the Fabry-Perot type conductance oscillations. The length of the Fabry-Perot electron resonator deduced from the period of the oscillations is in agreement with the physical length of the nanowire device.
Original languageEnglish
Title of host publicationAIP Conference Proceedings
Pages327-328
Number of pages2
Volume1399
DOIs
StatePublished - 2011
Event30th International Conference on the Physics of Semiconductors (ICPS-30) - Seoul, SOUTH KOREA, Seoul, Korea, Republic of
Duration: 25 Jul 201030 Jul 2010

Publication series

NamePhysics Of Semiconductors: 30Th International Conference On The Physics Of Semiconductors
ISSN (Print)0094-243X

Conference

Conference30th International Conference on the Physics of Semiconductors (ICPS-30)
Country/TerritoryKorea, Republic of
CitySeoul
Period25/07/1030/07/10

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy

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