The effect of light irradiation on electrons and holes trapping in nonvolotile memory capacitors employing sub 10 nm SiO2-HfO 2 stacks and Au nanocrystals

V. Mikhelashvili, B. Meyler, M. Garbrecht, T. Cohen-Hyams, Y. Roizin, M. Lisiansky, W. D. Kaplan, Y. Salzman, G. Eisenstein

Technion - Israel Institute of Technology

Research output: Contribution to journal › Article › peer-review

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