Tetrahedral amorphous carbon resistive memories with graphene-based electrodes

A. K. Ott, C. Dou, U. Sassi, I. Goykhman, D. Yoon, J. Wu, A. Lombardo, A. C. Ferrari

Research output: Contribution to journalArticlepeer-review

Abstract

Resistive-switching memories are alternative to Si-based ones, which face scaling and high power consumption issues. Tetrahedral amorphous carbon (ta-C) shows reversible, non-volatile resistive switching. Here we report polarity independent ta-C resistive memory devices with graphenebased electrodes. Our devices show ON/OFF resistance ratios ~4 × 105, ten times higher than with metal electrodes, with no increase in switching power, and low power density ~14 μW μm-2. We attribute this to a suppressed tunneling current due to the low density of states of graphene near the Dirac point, consistent with the current-voltage characteristics derived from a quantum point contact model. Our devices also have multiple resistive states. This allows storing more than one bit per cell. This can be exploited in a range of signal processing/computing-type operations, such as implementing logic, providing synaptic and neuron-like mimics, and performing analogue signal processing in non-von-Neumann architectures.

Original languageEnglish
Article number045028
Journal2D Materials
Volume5
Issue number4
DOIs
StatePublished - Oct 2018
Externally publishedYes

Keywords

  • devices
  • graphene
  • resistive memories

All Science Journal Classification (ASJC) codes

  • General Chemistry
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • General Materials Science

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