Terahertz Sensing and Imaging with Silicon Field-Effect Transistors up to 9 THz

Alvydas Lisauskas, Sebastian Boppel, Dalius Seliuta, Linas Minkevičius, Irmantas Kašalynas, Gintaras Valušis, B. Khamaisi, Viktor Krozer, E. Socher, Hartmut G. Roskos

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The detection of THz radiation is linked with mainstream silicon technology using plasmonic mixing in MOSFETs. We report imaging in heterodyne and subharmonic-mixing mode for enhanced dynamic range, and present a 220-GHz all-silicon imager.

Original languageEnglish
Title of host publicationLatin America Optics and Photonics Conference, LAOP 2012
PublisherOptica Publishing Group (formerly OSA)
ISBN (Electronic)9781557529589
StatePublished - 2012
EventLatin America Optics and Photonics Conference, LAOP 2012 - Sao Sebastiao, Brazil
Duration: 10 Nov 201213 Nov 2012

Publication series

NameOptics InfoBase Conference Papers

Conference

ConferenceLatin America Optics and Photonics Conference, LAOP 2012
Country/TerritoryBrazil
CitySao Sebastiao
Period10/11/1213/11/12

Keywords

  • CMOS
  • plasmons
  • self-mixing
  • submillimeterwave detectors
  • terahertz detection
  • terahertz imaging

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Mechanics of Materials

Fingerprint

Dive into the research topics of 'Terahertz Sensing and Imaging with Silicon Field-Effect Transistors up to 9 THz'. Together they form a unique fingerprint.

Cite this