Temperature dependence of cathodoluminescence emission in irradiated Si-doped β-Ga2O3

Sushrut Modak; Leonid Chernyak; Alfons Schulte; Minghan Xian; Fan Ren; Stephen J. Pearton; Arie Ruzin; Sergey S. Kosolobov; Vladimir P. Drachev

doi:https://doi.org/10.1063/5.0073692

Temperature dependence of cathodoluminescence emission in irradiated Si-doped β-Ga₂O₃

Sushrut Modak, Leonid Chernyak, Alfons Schulte, Minghan Xian, Fan Ren, Stephen J. Pearton, Arie Ruzin, Sergey S. Kosolobov, Vladimir P. Drachev

School of Electrical Engineering

Tel Aviv University

Research output: Contribution to journal › Article › peer-review

Abstract

Temperature dependent continuous and time-resolved cathodoluminescence measurements were employed to understand the luminescence from Si-doped β-Ga2O3 prior to irradiation and after 10 MeV proton and 18 MeV alpha-particle irradiation. The shape and location of the luminescence components [ultraviolet luminescence (UVL′) at 3.63 eV, UVL at 3.3 eV, and blue-luminescence at 2.96 eV] obtained from Gaussian decomposition did not change in either width or peak location, indicating that new radiation-induced trap-levels were non-radiative in nature between the 4.5 and 310 K temperature range. Activation energies, associated with thermal quenching of UVL′ and UVL bands, show temperature dependence, suggesting ionization of shallow Si-donors and a thermally activated non-radiative process.

Original language	English
Article number	125014
Journal	AIP Advances
Volume	11
Issue number	12
DOIs	https://doi.org/10.1063/5.0073692
State	Published - 1 Dec 2021

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

Access to Document

https://doi.org/10.1063/5.0073692

Cite this

@article{2dabad81aabe43ec8e4520e645726b8e,

title = "Temperature dependence of cathodoluminescence emission in irradiated Si-doped β-Ga2O3",

abstract = "Temperature dependent continuous and time-resolved cathodoluminescence measurements were employed to understand the luminescence from Si-doped β-Ga2O3 prior to irradiation and after 10 MeV proton and 18 MeV alpha-particle irradiation. The shape and location of the luminescence components [ultraviolet luminescence (UVL′) at 3.63 eV, UVL at 3.3 eV, and blue-luminescence at 2.96 eV] obtained from Gaussian decomposition did not change in either width or peak location, indicating that new radiation-induced trap-levels were non-radiative in nature between the 4.5 and 310 K temperature range. Activation energies, associated with thermal quenching of UVL′ and UVL bands, show temperature dependence, suggesting ionization of shallow Si-donors and a thermally activated non-radiative process.",

author = "Sushrut Modak and Leonid Chernyak and Alfons Schulte and Minghan Xian and Fan Ren and Pearton, {Stephen J.} and Arie Ruzin and Kosolobov, {Sergey S.} and Drachev, {Vladimir P.}",

note = "Publisher Copyright: {\textcopyright} 2021 Author(s).",

year = "2021",

month = dec,

day = "1",

doi = "https://doi.org/10.1063/5.0073692",

language = "الإنجليزيّة",

volume = "11",

journal = "AIP Advances",

issn = "2158-3226",

publisher = "American Institute of Physics",

number = "12",

}

TY - JOUR

T1 - Temperature dependence of cathodoluminescence emission in irradiated Si-doped β-Ga2O3

AU - Modak, Sushrut

AU - Chernyak, Leonid

AU - Schulte, Alfons

AU - Xian, Minghan

AU - Ren, Fan

AU - Pearton, Stephen J.

AU - Ruzin, Arie

AU - Kosolobov, Sergey S.

AU - Drachev, Vladimir P.

PY - 2021/12/1

Y1 - 2021/12/1

N2 - Temperature dependent continuous and time-resolved cathodoluminescence measurements were employed to understand the luminescence from Si-doped β-Ga2O3 prior to irradiation and after 10 MeV proton and 18 MeV alpha-particle irradiation. The shape and location of the luminescence components [ultraviolet luminescence (UVL′) at 3.63 eV, UVL at 3.3 eV, and blue-luminescence at 2.96 eV] obtained from Gaussian decomposition did not change in either width or peak location, indicating that new radiation-induced trap-levels were non-radiative in nature between the 4.5 and 310 K temperature range. Activation energies, associated with thermal quenching of UVL′ and UVL bands, show temperature dependence, suggesting ionization of shallow Si-donors and a thermally activated non-radiative process.

AB - Temperature dependent continuous and time-resolved cathodoluminescence measurements were employed to understand the luminescence from Si-doped β-Ga2O3 prior to irradiation and after 10 MeV proton and 18 MeV alpha-particle irradiation. The shape and location of the luminescence components [ultraviolet luminescence (UVL′) at 3.63 eV, UVL at 3.3 eV, and blue-luminescence at 2.96 eV] obtained from Gaussian decomposition did not change in either width or peak location, indicating that new radiation-induced trap-levels were non-radiative in nature between the 4.5 and 310 K temperature range. Activation energies, associated with thermal quenching of UVL′ and UVL bands, show temperature dependence, suggesting ionization of shallow Si-donors and a thermally activated non-radiative process.

UR - http://www.scopus.com/inward/record.url?scp=85121226496&partnerID=8YFLogxK

U2 - https://doi.org/10.1063/5.0073692

DO - https://doi.org/10.1063/5.0073692

M3 - مقالة

SN - 2158-3226

VL - 11

JO - AIP Advances

JF - AIP Advances

IS - 12

M1 - 125014

ER -

Temperature dependence of cathodoluminescence emission in irradiated Si-doped β-Ga₂O₃

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this