Temperature and intensity dependence of the open-circuit voltage of InGaN/GaN multi-quantum well solar cells

Matthias Auf der Maur; Gilad Moses; Jeffrey M. Gordon; Xuanqi Huang; Yuji Zhao; Eugene A. Katz

doi:10.1016/j.solmat.2021.111253

Temperature and intensity dependence of the open-circuit voltage of InGaN/GaN multi-quantum well solar cells

Matthias Auf der Maur, Gilad Moses, Jeffrey M. Gordon, Xuanqi Huang, Yuji Zhao, Eugene A. Katz

The Swiss Institute for Dryland Environmental and Energy Research

Ben-Gurion University of the Negev

Research output: Contribution to journal › Article › peer-review

Abstract

Motivated by possible application of InGaN/GaN multi-quantum well solar cells in hybrid concentrated photovoltaic / solar thermal power conversion systems, we have analyzed the temperature and intensity dependence of the open-circuit voltage of such devices up to 725 K and more than 1000 suns. We show that the simple ABC model routinely used to analyze the measured quantum efficiency data of InGaN/GaN LEDs can accurately reproduce the temperature and intensity dependence of the measured open-circuit voltage if a temperature-dependent Shockley–Read–Hall lifetime is used and device heating is taken into account.

Original language	American English
Article number	111253
Journal	Solar Energy Materials and Solar Cells
Volume	230
DOIs	https://doi.org/10.1016/j.solmat.2021.111253
State	Published - 15 Sep 2021

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Band gap
Carrier recombination
Concentrator photovoltaics
InGaN/GaN multi-quantum wells
Open circuit voltage

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films

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10.1016/j.solmat.2021.111253

Cite this

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title = "Temperature and intensity dependence of the open-circuit voltage of InGaN/GaN multi-quantum well solar cells",

abstract = "Motivated by possible application of InGaN/GaN multi-quantum well solar cells in hybrid concentrated photovoltaic / solar thermal power conversion systems, we have analyzed the temperature and intensity dependence of the open-circuit voltage of such devices up to 725 K and more than 1000 suns. We show that the simple ABC model routinely used to analyze the measured quantum efficiency data of InGaN/GaN LEDs can accurately reproduce the temperature and intensity dependence of the measured open-circuit voltage if a temperature-dependent Shockley–Read–Hall lifetime is used and device heating is taken into account.",

keywords = "Band gap, Carrier recombination, Concentrator photovoltaics, InGaN/GaN multi-quantum wells, Open circuit voltage",

author = "\{Auf der Maur\}, Matthias and Gilad Moses and Gordon, \{Jeffrey M.\} and Xuanqi Huang and Yuji Zhao and Katz, \{Eugene A.\}",

note = "Publisher Copyright: {\textcopyright} 2021",

year = "2021",

month = sep,

day = "15",

doi = "10.1016/j.solmat.2021.111253",

language = "American English",

volume = "230",

journal = "Solar Energy Materials and Solar Cells",

issn = "0927-0248",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Temperature and intensity dependence of the open-circuit voltage of InGaN/GaN multi-quantum well solar cells

AU - Auf der Maur, Matthias

AU - Moses, Gilad

AU - Gordon, Jeffrey M.

AU - Huang, Xuanqi

AU - Zhao, Yuji

AU - Katz, Eugene A.

PY - 2021/9/15

Y1 - 2021/9/15

N2 - Motivated by possible application of InGaN/GaN multi-quantum well solar cells in hybrid concentrated photovoltaic / solar thermal power conversion systems, we have analyzed the temperature and intensity dependence of the open-circuit voltage of such devices up to 725 K and more than 1000 suns. We show that the simple ABC model routinely used to analyze the measured quantum efficiency data of InGaN/GaN LEDs can accurately reproduce the temperature and intensity dependence of the measured open-circuit voltage if a temperature-dependent Shockley–Read–Hall lifetime is used and device heating is taken into account.

AB - Motivated by possible application of InGaN/GaN multi-quantum well solar cells in hybrid concentrated photovoltaic / solar thermal power conversion systems, we have analyzed the temperature and intensity dependence of the open-circuit voltage of such devices up to 725 K and more than 1000 suns. We show that the simple ABC model routinely used to analyze the measured quantum efficiency data of InGaN/GaN LEDs can accurately reproduce the temperature and intensity dependence of the measured open-circuit voltage if a temperature-dependent Shockley–Read–Hall lifetime is used and device heating is taken into account.

KW - Band gap

KW - Carrier recombination

KW - Concentrator photovoltaics

KW - InGaN/GaN multi-quantum wells

KW - Open circuit voltage

UR - http://www.scopus.com/inward/record.url?scp=85108656429&partnerID=8YFLogxK

U2 - 10.1016/j.solmat.2021.111253

DO - 10.1016/j.solmat.2021.111253

M3 - Article

SN - 0927-0248

VL - 230

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

M1 - 111253

ER -

Temperature and intensity dependence of the open-circuit voltage of InGaN/GaN multi-quantum well solar cells

Abstract

UN SDGs

Keywords

All Science Journal Classification (ASJC) codes

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