Sub-Thermionic steep switching in hole-doped WSe2 Transistors

Connor J. McClellan; Eilam Yalon; Lili Cai; Saurabh Suryavanshi; Xiaolin Zheng; Eric Pop

doi:https://doi.org/10.1109/DRC.2018.8442237

Sub-Thermionic steep switching in hole-doped WSe₂ Transistors

Connor J. McClellan, Eilam Yalon, Lili Cai, Saurabh Suryavanshi, Xiaolin Zheng, Eric Pop

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Decreasing the subthreshold swing (SS) of field-effect transistors (FETs) to sub-60 mV/decade at room temperature can enable next-generation low-power electronics [1]. Here, we demonstrate steep switching (SS < 5 mV/ decade}) and high on-current (I_ON≈ 400μ A/μ m) in non-uniformly hole-doped WSe₂ transistors. By setting up large lateral electric field gradients through spatial variation of doping, we deduce that the abrupt switching behavior is consistent with avalanche (impact ionization [2]) of charge carriers, opening up a new approach to achieve low-power transistors based on ultra-thin 2D materials.

Original language	English
Title of host publication	2018 76th Device Research Conference, DRC 2018
DOIs	https://doi.org/10.1109/DRC.2018.8442237
State	Published - 20 Aug 2018
Externally published	Yes
Event	76th Device Research Conference, DRC 2018 - Santa Barbara, United States Duration: 24 Jun 2018 → 27 Jun 2018

Publication series

Name	Device Research Conference - Conference Digest, DRC
Volume	2018-June

Conference

Conference	76th Device Research Conference, DRC 2018
Country/Territory	United States
City	Santa Barbara
Period	24/06/18 → 27/06/18

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

https://doi.org/10.1109/DRC.2018.8442237

Cite this

@inproceedings{5d0d8ca3a8474282aa9666e8f492d736,

title = "Sub-Thermionic steep switching in hole-doped WSe2 Transistors",

abstract = "Decreasing the subthreshold swing (SS) of field-effect transistors (FETs) to sub-60 mV/decade at room temperature can enable next-generation low-power electronics [1]. Here, we demonstrate steep switching (SS < 5 mV/ decade}) and high on-current (ION≈ 400μ A/μ m) in non-uniformly hole-doped WSe2 transistors. By setting up large lateral electric field gradients through spatial variation of doping, we deduce that the abrupt switching behavior is consistent with avalanche (impact ionization [2]) of charge carriers, opening up a new approach to achieve low-power transistors based on ultra-thin 2D materials.",

author = "McClellan, {Connor J.} and Eilam Yalon and Lili Cai and Saurabh Suryavanshi and Xiaolin Zheng and Eric Pop",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 76th Device Research Conference, DRC 2018 ; Conference date: 24-06-2018 Through 27-06-2018",

year = "2018",

month = aug,

day = "20",

doi = "https://doi.org/10.1109/DRC.2018.8442237",

language = "الإنجليزيّة",

isbn = "9781538630280",

series = "Device Research Conference - Conference Digest, DRC",

booktitle = "2018 76th Device Research Conference, DRC 2018",

}

McClellan, CJ, Yalon, E, Cai, L, Suryavanshi, S, Zheng, X & Pop, E 2018, Sub-Thermionic steep switching in hole-doped WSe₂ Transistors. in 2018 76th Device Research Conference, DRC 2018., 8442237, Device Research Conference - Conference Digest, DRC, vol. 2018-June, 76th Device Research Conference, DRC 2018, Santa Barbara, United States, 24/06/18. https://doi.org/10.1109/DRC.2018.8442237

TY - GEN

T1 - Sub-Thermionic steep switching in hole-doped WSe2 Transistors

AU - McClellan, Connor J.

AU - Yalon, Eilam

AU - Cai, Lili

AU - Suryavanshi, Saurabh

AU - Zheng, Xiaolin

AU - Pop, Eric

PY - 2018/8/20

Y1 - 2018/8/20

N2 - Decreasing the subthreshold swing (SS) of field-effect transistors (FETs) to sub-60 mV/decade at room temperature can enable next-generation low-power electronics [1]. Here, we demonstrate steep switching (SS < 5 mV/ decade}) and high on-current (ION≈ 400μ A/μ m) in non-uniformly hole-doped WSe2 transistors. By setting up large lateral electric field gradients through spatial variation of doping, we deduce that the abrupt switching behavior is consistent with avalanche (impact ionization [2]) of charge carriers, opening up a new approach to achieve low-power transistors based on ultra-thin 2D materials.

AB - Decreasing the subthreshold swing (SS) of field-effect transistors (FETs) to sub-60 mV/decade at room temperature can enable next-generation low-power electronics [1]. Here, we demonstrate steep switching (SS < 5 mV/ decade}) and high on-current (ION≈ 400μ A/μ m) in non-uniformly hole-doped WSe2 transistors. By setting up large lateral electric field gradients through spatial variation of doping, we deduce that the abrupt switching behavior is consistent with avalanche (impact ionization [2]) of charge carriers, opening up a new approach to achieve low-power transistors based on ultra-thin 2D materials.

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U2 - https://doi.org/10.1109/DRC.2018.8442237

DO - https://doi.org/10.1109/DRC.2018.8442237

M3 - منشور من مؤتمر

SN - 9781538630280

T3 - Device Research Conference - Conference Digest, DRC

BT - 2018 76th Device Research Conference, DRC 2018

T2 - 76th Device Research Conference, DRC 2018

Y2 - 24 June 2018 through 27 June 2018

ER -