Abstract
A key bottleneck in using phase change memory (PCM) for training artificial neural networks is the abrupt nature of the melt-quench process (amorphization), which does not allow gradual reset. Here we demonstrate analog reset (partial amorphization) in PCM by applying sub-nanosecond programming pulses. Intermediate-level reset states are enabled by reducing the pulse width below the dominant thermal time constant of the PCM, which is on the order of a few nanoseconds. We show gradual change in PCM resistance as a function of number of (sub-ns) reset pulses with 50 intermediate states. Our unique scheme allows fine-tuning the resistance with sub-ns pulses of constant amplitude, which can significantly reduce the programming complexity in training neuromorphic hardware.
Original language | English |
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Pages (from-to) | 1291-1294 |
Number of pages | 4 |
Journal | IEEE Electron Device Letters |
Volume | 42 |
Issue number | 9 |
DOIs | |
State | Published - 1 Sep 2021 |
Keywords
- Analog PCM
- Crystallization
- Electrical resistance measurement
- Multi-level PCM
- Neuromorphic Devices
- Neuromorphics
- Partial Reset
- Phase change materials
- Resistance
- Resistance Drift
- Sub-ns Pulses
- Temperature measurement
- Transmission line measurements
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering