Sub-Nanosecond Pulses Enable Partial Reset for Analog Phase Change Memory

Keren Stern, Nicolas Wainstein, Yair Keller, Christopher M. Neumann, Eric Pop, Shahar Kvatinsky, Eilam Yalon

Research output: Contribution to journalArticlepeer-review

Abstract

A key bottleneck in using phase change memory (PCM) for training artificial neural networks is the abrupt nature of the melt-quench process (amorphization), which does not allow gradual reset. Here we demonstrate analog reset (partial amorphization) in PCM by applying sub-nanosecond programming pulses. Intermediate-level reset states are enabled by reducing the pulse width below the dominant thermal time constant of the PCM, which is on the order of a few nanoseconds. We show gradual change in PCM resistance as a function of number of (sub-ns) reset pulses with 50 intermediate states. Our unique scheme allows fine-tuning the resistance with sub-ns pulses of constant amplitude, which can significantly reduce the programming complexity in training neuromorphic hardware.

Original languageEnglish
Pages (from-to)1291-1294
Number of pages4
JournalIEEE Electron Device Letters
Volume42
Issue number9
DOIs
StatePublished - 1 Sep 2021

Keywords

  • Analog PCM
  • Crystallization
  • Electrical resistance measurement
  • Multi-level PCM
  • Neuromorphic Devices
  • Neuromorphics
  • Partial Reset
  • Phase change materials
  • Resistance
  • Resistance Drift
  • Sub-ns Pulses
  • Temperature measurement
  • Transmission line measurements

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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