Sub-micrometer epitaxial Josephson junctions for quantum circuits

Jeffrey S. Kline; Michael R. Vissers; Fabio C.S. Da Silva; David S. Wisbey; Martin Weides; Terence J. Weir; Benjamin Turek; Danielle A. Braje; William D. Oliver; Yoni Shalibo; Nadav Katz; Blake R. Johnson; Thomas A. Ohki; David P. Pappas

doi:https://doi.org/10.1088/0953-2048/25/2/025005

Sub-micrometer epitaxial Josephson junctions for quantum circuits

Jeffrey S. Kline, Michael R. Vissers, Fabio C.S. Da Silva, David S. Wisbey, Martin Weides, Terence J. Weir, Benjamin Turek, Danielle A. Braje, William D. Oliver, Yoni Shalibo, Nadav Katz, Blake R. Johnson, Thomas A. Ohki, David P. Pappas

Racah Institute of Physics

The Hebrew University of Jerusalem

Research output: Contribution to journal › Article › peer-review

Abstract

We present a fabrication scheme and testing results for epitaxial sub-micrometer Josephson junctions. The junctions are made using a high-temperature (1170K) via process yielding junctions as small as 0.8νm in diameter by use of optical lithography. Sapphire (Al ₂O ₃) tunnel-barriers are grown on an epitaxial Re/Ti multilayer base-electrode. We have fabricated devices with both Re and Al top-electrodes. While room temperature (295K) resistance versus area data are favorable for both types of top-electrodes, the low-temperature (50mK) data show that junctions with the Al top-electrode have a much higher subgap resistance. The microwave loss properties of the junctions have been measured by use of superconducting Josephson junction qubits. The results show that high subgap resistance correlates with improved qubit performance.

Original language	English
Article number	025005
Journal	Superconductor Science and Technology
Volume	25
Issue number	2
DOIs	https://doi.org/10.1088/0953-2048/25/2/025005
State	Published - Feb 2012

All Science Journal Classification (ASJC) codes

Ceramics and Composites
Condensed Matter Physics
Metals and Alloys
Electrical and Electronic Engineering
Materials Chemistry

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https://doi.org/10.1088/0953-2048/25/2/025005

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Kline, J. S., Vissers, M. R., Da Silva, F. C. S., Wisbey, D. S., Weides, M., Weir, T. J., Turek, B., Braje, D. A., Oliver, W. D., Shalibo, Y., Katz, N., Johnson, B. R., Ohki, T. A., & Pappas, D. P. (2012). Sub-micrometer epitaxial Josephson junctions for quantum circuits. Superconductor Science and Technology, 25(2), Article 025005. https://doi.org/10.1088/0953-2048/25/2/025005

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title = "Sub-micrometer epitaxial Josephson junctions for quantum circuits",

abstract = "We present a fabrication scheme and testing results for epitaxial sub-micrometer Josephson junctions. The junctions are made using a high-temperature (1170K) via process yielding junctions as small as 0.8νm in diameter by use of optical lithography. Sapphire (Al 2O 3) tunnel-barriers are grown on an epitaxial Re/Ti multilayer base-electrode. We have fabricated devices with both Re and Al top-electrodes. While room temperature (295K) resistance versus area data are favorable for both types of top-electrodes, the low-temperature (50mK) data show that junctions with the Al top-electrode have a much higher subgap resistance. The microwave loss properties of the junctions have been measured by use of superconducting Josephson junction qubits. The results show that high subgap resistance correlates with improved qubit performance.",

author = "Kline, {Jeffrey S.} and Vissers, {Michael R.} and {Da Silva}, {Fabio C.S.} and Wisbey, {David S.} and Martin Weides and Weir, {Terence J.} and Benjamin Turek and Braje, {Danielle A.} and Oliver, {William D.} and Yoni Shalibo and Nadav Katz and Johnson, {Blake R.} and Ohki, {Thomas A.} and Pappas, {David P.}",

year = "2012",

month = feb,

doi = "https://doi.org/10.1088/0953-2048/25/2/025005",

language = "الإنجليزيّة",

volume = "25",

journal = "Superconductor Science and Technology",

issn = "0953-2048",

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TY - JOUR

T1 - Sub-micrometer epitaxial Josephson junctions for quantum circuits

AU - Kline, Jeffrey S.

AU - Vissers, Michael R.

AU - Da Silva, Fabio C.S.

AU - Wisbey, David S.

AU - Weides, Martin

AU - Weir, Terence J.

AU - Turek, Benjamin

AU - Braje, Danielle A.

AU - Oliver, William D.

AU - Shalibo, Yoni

AU - Katz, Nadav

AU - Johnson, Blake R.

AU - Ohki, Thomas A.

AU - Pappas, David P.

PY - 2012/2

Y1 - 2012/2

N2 - We present a fabrication scheme and testing results for epitaxial sub-micrometer Josephson junctions. The junctions are made using a high-temperature (1170K) via process yielding junctions as small as 0.8νm in diameter by use of optical lithography. Sapphire (Al 2O 3) tunnel-barriers are grown on an epitaxial Re/Ti multilayer base-electrode. We have fabricated devices with both Re and Al top-electrodes. While room temperature (295K) resistance versus area data are favorable for both types of top-electrodes, the low-temperature (50mK) data show that junctions with the Al top-electrode have a much higher subgap resistance. The microwave loss properties of the junctions have been measured by use of superconducting Josephson junction qubits. The results show that high subgap resistance correlates with improved qubit performance.

AB - We present a fabrication scheme and testing results for epitaxial sub-micrometer Josephson junctions. The junctions are made using a high-temperature (1170K) via process yielding junctions as small as 0.8νm in diameter by use of optical lithography. Sapphire (Al 2O 3) tunnel-barriers are grown on an epitaxial Re/Ti multilayer base-electrode. We have fabricated devices with both Re and Al top-electrodes. While room temperature (295K) resistance versus area data are favorable for both types of top-electrodes, the low-temperature (50mK) data show that junctions with the Al top-electrode have a much higher subgap resistance. The microwave loss properties of the junctions have been measured by use of superconducting Josephson junction qubits. The results show that high subgap resistance correlates with improved qubit performance.

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U2 - https://doi.org/10.1088/0953-2048/25/2/025005

DO - https://doi.org/10.1088/0953-2048/25/2/025005

M3 - مقالة

SN - 0953-2048

VL - 25

JO - Superconductor Science and Technology

JF - Superconductor Science and Technology

IS - 2

M1 - 025005

ER -

Sub-micrometer epitaxial Josephson junctions for quantum circuits

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