Stress-Induced Resistive Switching in Pt/HfO2/Ti Devices

Gilad Zeevi, Alexander Katsman, Yuval E. Yaish

Research output: Contribution to journalArticlepeer-review

Abstract

In the present work, we study the initial SET mechanism of resistive switching (RS) in Pt/HfO2/Ti devices under a static electrical stress and the RS mechanism under a bias sweeping mode with rates of 100 mV/s–300 mV/s. We characterize the thin HfO2 dielectric layer by x-ray photoelectron spectroscopy and x-ray diffraction. These findings show that the layer structure is stoichiometric and nanocrystalline with a crystal diameter of ∼ 14 Å. We measure the temporal dependence of the conductive filament growth at different temperatures and for various biases. Furthermore, these devices present stable bipolar resistive switching with a high-to-low resistive state (HRS/LRS) ratio of more than three orders of magnitude. Activation energy ERS ≈ 0.56 eV and drift current parameter V0 ≈ 0.07 V were determined from the temporal dependence of the initial ‘SET’ process, first HRS to LRS transition [for static electrical stress of VDS = (4.7–5.0 V)]. We analyze the results according to our model suggesting generation of double-charge oxygen vacancies at the anode and their diffusion across the dielectric layer. The double-charge vacancies transform to a single charge and then to neutral vacancies by capturing hot electrons, and form a conductive filament as soon as a critical neutral-vacancy cluster is formed across the dielectric layer.

Original languageEnglish
Pages (from-to)1505-1511
Number of pages7
JournalJournal of Electronic Materials
Volume47
Issue number2
DOIs
StatePublished - 1 Feb 2018

Keywords

  • Resistive switching
  • conductive filament
  • hafnium oxide
  • vacancies

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

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