TY - JOUR
T1 - Stabilization of exponential number of discrete remanent states with localized spin-orbit torques
AU - Das, Shubhankar
AU - Zaig, Ariel
AU - Schultz, Moty
AU - Klein, Lior
N1 - Publisher Copyright: © 2020 Author(s).
PY - 2020/6/29
Y1 - 2020/6/29
N2 - Using bilayer films of β-Ta/Ni0.8Fe0.2, we fabricate structures consisting of two, three, and four crossing ellipses, which exhibit shape-induced bi-axial, tri-axial, and quadro-axial magnetic anisotropy in the crossing area, respectively. Structures consisting of N crossing ellipses can be stabilized in 2N remanent states by applying (and removing) an external magnetic field. However, we show that with field-free spin-orbit torques induced by flowing currents in individual ellipses, the number of remanent states grows to 2 N. Furthermore, when the current flows between the edges of different ellipses, the number of remanent states jumps to 2 2 N, including states that exhibit a π-Néel domain wall in the overlap area. The very large number of accessible remanent magnetic states that are exhibited by the relatively simple magnetic structures paves the way for intriguing spintronics applications including memory devices.
AB - Using bilayer films of β-Ta/Ni0.8Fe0.2, we fabricate structures consisting of two, three, and four crossing ellipses, which exhibit shape-induced bi-axial, tri-axial, and quadro-axial magnetic anisotropy in the crossing area, respectively. Structures consisting of N crossing ellipses can be stabilized in 2N remanent states by applying (and removing) an external magnetic field. However, we show that with field-free spin-orbit torques induced by flowing currents in individual ellipses, the number of remanent states grows to 2 N. Furthermore, when the current flows between the edges of different ellipses, the number of remanent states jumps to 2 2 N, including states that exhibit a π-Néel domain wall in the overlap area. The very large number of accessible remanent magnetic states that are exhibited by the relatively simple magnetic structures paves the way for intriguing spintronics applications including memory devices.
UR - http://www.scopus.com/inward/record.url?scp=85087548357&partnerID=8YFLogxK
U2 - 10.1063/5.0005964
DO - 10.1063/5.0005964
M3 - مقالة
SN - 0003-6951
VL - 116
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 26
M1 - 0005964
ER -