Spin-to-Charge Conversion in Orthorhombic RhSi Crystalline Thin Films

The rise of nonmagnetic topological semimetals, which provide a promising platform for observing and controlling various spin-orbit effects, has led to significant advancements in the field of topological spintronics. RhSi exists in two distinct polymorphs: cubic and orthorhombic crystal structures. The noncentrosymmetric B20 cubic structure has been extensively studied in the bulk for hosting unconventional multifold Fermions. In contrast, the orthorhombic structure, which crystallizes in the Pnma space group (No. 62), remains less explored and belongs to the family of topological Dirac semimetals. In this work, we investigate the structural, magnetic, and electrical properties of RhSi textured-epitaxial films grown on Si(111) substrates, which crystallize in the orthorhombic structure. We investigate the efficiency of pure spin current transport across RhSi/permalloy interfaces and the subsequent spin-to-charge current conversion via inverse spin Hall effect measurements. The experimentally determined spin Hall conductivity in orthorhombic RhSi reaches a maximum value of 126 (Formula presented) at 10 K, which aligns reasonably well with first-principles calculations that attribute the spin Hall effect in RhSi to the spin Berry curvature mechanism. Additionally, we demonstrate the ability to achieve a sizable spin-mixing conductance (34.7 nm^-2) and an exceptionally high interfacial spin transparency of 88% in this heterostructure, underlining its potential for spin-orbit torque switching applications. Overall, this study broadens the scope of topological spintronics, emphasizing the controlled interfacial spin-transport processes and subsequent spin-to-charge conversion in a previously unexplored topological Dirac semimetal RhSi/ferromagnet heterostructure.