Abstract
In a memristor crossbar array, a memristor is positioned on each row-column intersection, and its resistance represents two states. The state is sensed by current flowing through the memristor. This work studies the sneak path problem in crossbars arrays, where current can sneak through neighboring cells resulting in reading a wrong state of the memristor. We give succinct characterizations of sneak-path avoiding constraints and use them to trade off read-power consumption with storage capacity.
| Original language | American English |
|---|---|
| Title of host publication | 4th Annual Non-Volatile Memories Workshop 2013 |
| Subtitle of host publication | NVMW - 2014 |
| State | Published - 2013 |