Abstract
We report on a proof-of-concept study of split-cell magnetic storage in which multi-bit magnetic memory cells are composed of several multilevel ferromagnetic dots with perpendicular magnetic anisotropy. Extraordinary Hall effect is used for reading the data. Feasibility of the approach is supported by realization of four-, eight- and sixteen- state cells.
Original language | English |
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Pages (from-to) | 1557-1560 |
Number of pages | 4 |
Journal | Journal of Magnetism and Magnetic Materials |
Volume | 324 |
Issue number | 8 |
DOIs | |
State | Published - Apr 2012 |
Keywords
- Extraordinary Hall effect
- Multi-bit magnetic memory
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics