Abstract
We report on a new architecture and theoretical and experimental feasibility study of a resonant accelerometer, combining a robust single proof mass (PM) design with a compliant parallel motion linkage-type force amplifier. The device, incorporating four effectively oblique force-transmitting links and a resonant sensing beam attached at its ends to two shutters, is distinguished by a simple, manufacturable geometry, purely axial, free from any bending, loading of the vibrating sensing beam, and low parasitic compliance. The device was fabricated from the 25 μm thick layer of a silicon-on-insulator (SOI) wafer. The acceleration-dependent frequency of the electrostatically driven 300 μm long and 3.8 μm wide resonator was measured using capacitive sensing, combined with open or closed-loop excitation scenarios. Consistently with the lumped and the full scale FE models prediction, 760 Hz/g sensitivity of the device, with the ≈2600 × 2600 μm PM, was demonstrated during the ± g experiment.
| Original language | English |
|---|---|
| Article number | 1502804 |
| Journal | IEEE Sensors Letters |
| Volume | 8 |
| Issue number | 12 |
| DOIs | |
| State | Published - 2024 |
Keywords
- MEMS
- Sensor phenomena
- compliant force amplification mechanism
- electrostatic actuation
- resonant accelerometer
- sensor characterization
- silicon-on-insulator (SOI)
ASJC Scopus subject areas
- Instrumentation
- Electrical and Electronic Engineering
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