Single-crystalline van der Waals layered dielectric with high dielectric constant

Congcong Zhang, Teng Tu, Jingyue Wang, Yongchao Zhu, Congwei Tan, Liang Chen, Mei Wu, Ruixue Zhu, Yizhou Liu, Huixia Fu, Jia Yu, Yichi Zhang, Xuzhong Cong, Xuehan Zhou, Jiaji Zhao, Tianran Li, Zhimin Liao, Xiaosong Wu, Keji Lai, Binghai YanPeng Gao, Qianqian Huang, Hai Xu, Huiping Hu, Hongtao Liu, Jianbo Yin, Hailin Peng

Research output: Contribution to journalArticlepeer-review

Abstract

The scaling of silicon-based transistors at sub-ten-nanometre technology nodes faces challenges such as interface imperfection and gate current leakage for an ultrathin silicon channel1,2. For next-generation nanoelectronics, high-mobility two-dimensional (2D) layered semiconductors with an atomic thickness and dangling-bond-free surfaces are expected as channel materials to achieve smaller channel sizes, less interfacial scattering and more efficient gate-field penetration1,2. However, further progress towards 2D electronics is hindered by factors such as the lack of a high dielectric constant (κ) dielectric with an atomically flat and dangling-bond-free surface3,4. Here, we report a facile synthesis of a single-crystalline high-κ (κ of roughly 16.5) van der Waals layered dielectric Bi2SeO5. The centimetre-scale single crystal of Bi2SeO5 can be efficiently exfoliated to an atomically flat nanosheet as large as 250 × 200 μm2 and as thin as monolayer. With these Bi2SeO5 nanosheets as dielectric and encapsulation layers, 2D materials such as Bi2O2Se, MoS2 and graphene show improved electronic performances. For example, in 2D Bi2O2Se, the quantum Hall effect is observed and the carrier mobility reaches 470,000 cm2 V−1 s−1 at 1.8 K. Our finding expands the realm of dielectric and opens up a new possibility for lowering the gate voltage and power consumption in 2D electronics and integrated circuits.

Original languageEnglish
Pages (from-to)832-837
Number of pages6
JournalNature Materials
Volume22
Issue number7
DOIs
StatePublished - Jul 2023

All Science Journal Classification (ASJC) codes

  • General Chemistry
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • General Materials Science

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