Simulation of compensated and overcompensated Cd1-xZn xTe

A. Ruzin

doi:10.1016/j.nima.2012.10.101

Simulation of compensated and overcompensated Cd_1-xZn _xTe

A. Ruzin

School of Electrical Engineering

Tel Aviv University

Research output: Contribution to journal › Article › peer-review

Abstract

Ohmic and Schottky contacts were simulated on Cd_0.9Zn _0.1Te compensated by deep traps under thermodynamic equilibrium conditions. It is demonstrated that addition of deep levels with specific electric properties can compensate and over-compensate the semiconductor. The pinning of the Fermi level to the trap energy is correct in concept, but needs to be carefully calculated for each case.

Original language	English GB
Pages (from-to)	361-362
Number of pages	2
Journal	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	718
DOIs	https://doi.org/10.1016/j.nima.2012.10.101
State	Published - 2013

Keywords

CdZnTe
Compensation
Simulation

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

Access to Document

10.1016/j.nima.2012.10.101

Cite this

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title = "Simulation of compensated and overcompensated Cd1-xZn xTe",

abstract = "Ohmic and Schottky contacts were simulated on Cd0.9Zn 0.1Te compensated by deep traps under thermodynamic equilibrium conditions. It is demonstrated that addition of deep levels with specific electric properties can compensate and over-compensate the semiconductor. The pinning of the Fermi level to the trap energy is correct in concept, but needs to be carefully calculated for each case.",

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T1 - Simulation of compensated and overcompensated Cd1-xZn xTe

AU - Ruzin, A.

PY - 2013

Y1 - 2013

N2 - Ohmic and Schottky contacts were simulated on Cd0.9Zn 0.1Te compensated by deep traps under thermodynamic equilibrium conditions. It is demonstrated that addition of deep levels with specific electric properties can compensate and over-compensate the semiconductor. The pinning of the Fermi level to the trap energy is correct in concept, but needs to be carefully calculated for each case.

AB - Ohmic and Schottky contacts were simulated on Cd0.9Zn 0.1Te compensated by deep traps under thermodynamic equilibrium conditions. It is demonstrated that addition of deep levels with specific electric properties can compensate and over-compensate the semiconductor. The pinning of the Fermi level to the trap energy is correct in concept, but needs to be carefully calculated for each case.

KW - CdZnTe

KW - Compensation

KW - Simulation

UR - https://www.scopus.com/pages/publications/84887826772

U2 - 10.1016/j.nima.2012.10.101

DO - 10.1016/j.nima.2012.10.101

M3 - مقالة

SN - 0168-9002

VL - 718

SP - 361

EP - 362

JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

ER -