Silicon oxide dissolution in fluorohydrogenates ionic liquid

B. Shvartsev, D. Gelman, D. Starosvetsky, Y. Ein-Eli

Research output: Contribution to journalArticlepeer-review

Abstract

The first evidence of SiO2 dissolution process in oligo-fluoro-hydrogenate [EMIm(HF)2.3F] room temperature ionic liquid (RTIL) is reported here. Based on the electrochemical measurements, the etch rate of SiO2 in this specific ionic liquid media was found to be lower by an order of magnitude than the measured rate in similar solution volumes of aqueous HF. NMR and FTIR spectroscopies enabled to determine the dissolution mechanism of SiO2 in the oligo-fluoro-hydrogenate ionic liquid. Confirmation of the formation of both water and SiF6 2− as the reaction products was established. Moreover, the presence of water influences the anionic ratio in the ionic liquid.

Original languageEnglish
Pages (from-to)E135-E141
JournalJournal of the Electrochemical Society
Volume163
Issue number5
DOIs
StatePublished - 2016

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Renewable Energy, Sustainability and the Environment

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