Silicon carbide diffusion bonding by spark plasma sintering

Ron Aroshas; Idan Rosenthal; Adin Stern; Zvia Shmul; Sergei Kalabukhov; Nachum Frage

doi:https://doi.org/10.1080/10426914.2014.952019

Silicon carbide diffusion bonding by spark plasma sintering

Ron Aroshas, Idan Rosenthal, Adin Stern, Zvia Shmul, Sergei Kalabukhov, Nachum Frage

Department of Materials Engineering

Ben-Gurion University of the Negev

Research output: Contribution to journal › Article › peer-review

Abstract

This work reports results of silicon carbide plates, disks, pipes, and pipe-disk couples bonded by a spark plasma sintering apparatus. The joining was conducted at 1900°C for 30 min with a 35 MPa uniaxial pressure. The samples were analyzed by Scanning acoustic microscopy, which in turn revealed a low amount of small defects at the samples' periphery. Scanning acoustic microscopy results were verified through scanning electron microscopy and nanoindentation. It was concluded that Spark Plasma Sintering technique may serve as a valid and effective tool for diffusion bonding of high-temperature-resistant silicon carbide with different geometries.

Original language	English
Pages (from-to)	122-126
Number of pages	5
Journal	Materials and Manufacturing Processes
Volume	30
Issue number	1
DOIs	https://doi.org/10.1080/10426914.2014.952019
State	Published - 2 Jan 2015

Keywords

Joining
Microscopy
Nanoindentation
Nondestructive
Silicon carbide
Sintering

All Science Journal Classification (ASJC) codes

Materials Science(all)
Mechanics of Materials
Mechanical Engineering
Industrial and Manufacturing Engineering

Access to Document

https://doi.org/10.1080/10426914.2014.952019

Cite this

@article{13ec3acfee9c49eabc19145b01e6caea,

title = "Silicon carbide diffusion bonding by spark plasma sintering",

abstract = "This work reports results of silicon carbide plates, disks, pipes, and pipe-disk couples bonded by a spark plasma sintering apparatus. The joining was conducted at 1900°C for 30 min with a 35 MPa uniaxial pressure. The samples were analyzed by Scanning acoustic microscopy, which in turn revealed a low amount of small defects at the samples' periphery. Scanning acoustic microscopy results were verified through scanning electron microscopy and nanoindentation. It was concluded that Spark Plasma Sintering technique may serve as a valid and effective tool for diffusion bonding of high-temperature-resistant silicon carbide with different geometries.",

keywords = "Joining, Microscopy, Nanoindentation, Nondestructive, Silicon carbide, Sintering",

author = "Ron Aroshas and Idan Rosenthal and Adin Stern and Zvia Shmul and Sergei Kalabukhov and Nachum Frage",

note = "Funding Information: FUNDING The investigation was partly supported by US-Army project No. W911NF-13-1-0446. Publisher Copyright: Copyright {\textcopyright} Taylor & Francis Group, LLC.",

year = "2015",

month = jan,

day = "2",

doi = "https://doi.org/10.1080/10426914.2014.952019",

language = "English",

volume = "30",

pages = "122--126",

journal = "Materials and Manufacturing Processes",

issn = "1042-6914",

publisher = "Taylor and Francis Ltd.",

number = "1",

}

TY - JOUR

T1 - Silicon carbide diffusion bonding by spark plasma sintering

AU - Aroshas, Ron

AU - Rosenthal, Idan

AU - Stern, Adin

AU - Shmul, Zvia

AU - Kalabukhov, Sergei

AU - Frage, Nachum

PY - 2015/1/2

Y1 - 2015/1/2

N2 - This work reports results of silicon carbide plates, disks, pipes, and pipe-disk couples bonded by a spark plasma sintering apparatus. The joining was conducted at 1900°C for 30 min with a 35 MPa uniaxial pressure. The samples were analyzed by Scanning acoustic microscopy, which in turn revealed a low amount of small defects at the samples' periphery. Scanning acoustic microscopy results were verified through scanning electron microscopy and nanoindentation. It was concluded that Spark Plasma Sintering technique may serve as a valid and effective tool for diffusion bonding of high-temperature-resistant silicon carbide with different geometries.

AB - This work reports results of silicon carbide plates, disks, pipes, and pipe-disk couples bonded by a spark plasma sintering apparatus. The joining was conducted at 1900°C for 30 min with a 35 MPa uniaxial pressure. The samples were analyzed by Scanning acoustic microscopy, which in turn revealed a low amount of small defects at the samples' periphery. Scanning acoustic microscopy results were verified through scanning electron microscopy and nanoindentation. It was concluded that Spark Plasma Sintering technique may serve as a valid and effective tool for diffusion bonding of high-temperature-resistant silicon carbide with different geometries.

KW - Joining

KW - Microscopy

KW - Nanoindentation

KW - Nondestructive

KW - Silicon carbide

KW - Sintering

UR - http://www.scopus.com/inward/record.url?scp=84911928191&partnerID=8YFLogxK

U2 - https://doi.org/10.1080/10426914.2014.952019

DO - https://doi.org/10.1080/10426914.2014.952019

M3 - Article

SN - 1042-6914

VL - 30

SP - 122

EP - 126

JO - Materials and Manufacturing Processes

JF - Materials and Manufacturing Processes

IS - 1

ER -

Silicon carbide diffusion bonding by spark plasma sintering

Abstract

Keywords

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this