Setup for pressurizing thin films through the superconductor-insulator transition

R. Cohen, M. Nikolaevsky, R. Salem, A. Frydman

Research output: Contribution to journalArticlepeer-review

Abstract

We describe an experimental setup designed for transport measurement of thin disordered superconducting films as a function of pressure up to several GPa. We use a specially designed single screw diamond anvil cell that allows the gradual increase of high pressure at cryogenic temperatures. By depositing amorphous films of disordered superconducting indium oxide directly on the diamond, we avoid the effect of pressure-induced structural changes in the substrate. Using this technique, we are able to drive thin films through a pressure tuned superconductor-insulator transition.

Original languageEnglish
Article number083903
JournalReview of Scientific Instruments
Volume92
Issue number8
DOIs
StatePublished - 1 Aug 2021

All Science Journal Classification (ASJC) codes

  • Instrumentation

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