Sensing with Memristive Complementary Resistive Switch: Modelling and Simulations

Vishal Gupta; Danilo Pellegrini; Saurabh Khandelwal; Abusaleh Jabir; Shahar Kvatinsky; Eugenio Martinelli; Corrado Di Natale; Marco Ottavi

doi:10.1109/DFT50435.2020.9250843

Sensing with Memristive Complementary Resistive Switch: Modelling and Simulations

Vishal Gupta, Danilo Pellegrini, Saurabh Khandelwal, Abusaleh Jabir, Shahar Kvatinsky, Eugenio Martinelli, Corrado Di Natale, Marco Ottavi

Technion - Israel Institute of Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Sensors give factual and process information about the environment or other physical phenomena. Sensing using memristors has been recently introduced for its potential for high density integration and miniaturization. Complementary Resistive Switch (CRS) based sensor provides an extremely efficient crossbar array that reduces the sneak current. The objective of this paper is to introduce and evaluate a circuit model for sensing using memristive complementary resistive switch. We introduce a reliable SPICE implementation of memristor model that captures the sensing behaviour of memristor. Our simulation results also validate the SPICE model for CRS sensing architecture, whose parameters could be easily adapted to match experimental data. The results also investigate the sensitivity and device behaviour of memristor and CRS sensor device in the presence of oxidizing and reducing gases of different concentration.

Original language	English
Title of host publication	33rd IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2020
Editors	Luigi Dilillo, Mihalis Psarakis, Taniya Siddiqua
ISBN (Electronic)	9781728194578
DOIs	https://doi.org/10.1109/DFT50435.2020.9250843
State	Published - 19 Oct 2020
Event	33rd IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2020 - Virtual, Online, Italy Duration: 19 Oct 2020 → 21 Oct 2020

Publication series

Name	33rd IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2020

Conference

Conference	33rd IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2020
Country/Territory	Italy
City	Virtual, Online
Period	19/10/20 → 21/10/20

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Signal Processing
Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality

Access to Document

10.1109/DFT50435.2020.9250843

Cite this

Gupta, V., Pellegrini, D., Khandelwal, S., Jabir, A., Kvatinsky, S., Martinelli, E., Di Natale, C., & Ottavi, M. (2020). Sensing with Memristive Complementary Resistive Switch: Modelling and Simulations. In L. Dilillo, M. Psarakis, & T. Siddiqua (Eds.), 33rd IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2020 Article 9250843 (33rd IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2020). https://doi.org/10.1109/DFT50435.2020.9250843

Gupta, Vishal ; Pellegrini, Danilo ; Khandelwal, Saurabh et al. / Sensing with Memristive Complementary Resistive Switch : Modelling and Simulations. 33rd IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2020. editor / Luigi Dilillo ; Mihalis Psarakis ; Taniya Siddiqua. 2020. (33rd IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2020).

@inproceedings{9af5e1b47d394fa39ac69044fc6c1c69,

title = "Sensing with Memristive Complementary Resistive Switch: Modelling and Simulations",

abstract = "Sensors give factual and process information about the environment or other physical phenomena. Sensing using memristors has been recently introduced for its potential for high density integration and miniaturization. Complementary Resistive Switch (CRS) based sensor provides an extremely efficient crossbar array that reduces the sneak current. The objective of this paper is to introduce and evaluate a circuit model for sensing using memristive complementary resistive switch. We introduce a reliable SPICE implementation of memristor model that captures the sensing behaviour of memristor. Our simulation results also validate the SPICE model for CRS sensing architecture, whose parameters could be easily adapted to match experimental data. The results also investigate the sensitivity and device behaviour of memristor and CRS sensor device in the presence of oxidizing and reducing gases of different concentration.",

author = "Vishal Gupta and Danilo Pellegrini and Saurabh Khandelwal and Abusaleh Jabir and Shahar Kvatinsky and Eugenio Martinelli and {Di Natale}, Corrado and Marco Ottavi",

note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 33rd IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2020 ; Conference date: 19-10-2020 Through 21-10-2020",

year = "2020",

month = oct,

day = "19",

doi = "10.1109/DFT50435.2020.9250843",

language = "الإنجليزيّة",

series = "33rd IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2020",

editor = "Luigi Dilillo and Mihalis Psarakis and Taniya Siddiqua",

booktitle = "33rd IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2020",

}

Gupta, V, Pellegrini, D, Khandelwal, S, Jabir, A, Kvatinsky, S, Martinelli, E, Di Natale, C & Ottavi, M 2020, Sensing with Memristive Complementary Resistive Switch: Modelling and Simulations. in L Dilillo, M Psarakis & T Siddiqua (eds), 33rd IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2020., 9250843, 33rd IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2020, 33rd IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2020, Virtual, Online, Italy, 19/10/20. https://doi.org/10.1109/DFT50435.2020.9250843

Sensing with Memristive Complementary Resistive Switch: Modelling and Simulations. / Gupta, Vishal; Pellegrini, Danilo; Khandelwal, Saurabh et al.
33rd IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2020. ed. / Luigi Dilillo; Mihalis Psarakis; Taniya Siddiqua. 2020. 9250843 (33rd IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2020).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Sensing with Memristive Complementary Resistive Switch

T2 - 33rd IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2020

AU - Gupta, Vishal

AU - Pellegrini, Danilo

AU - Khandelwal, Saurabh

AU - Jabir, Abusaleh

AU - Kvatinsky, Shahar

AU - Martinelli, Eugenio

AU - Di Natale, Corrado

AU - Ottavi, Marco

PY - 2020/10/19

Y1 - 2020/10/19

N2 - Sensors give factual and process information about the environment or other physical phenomena. Sensing using memristors has been recently introduced for its potential for high density integration and miniaturization. Complementary Resistive Switch (CRS) based sensor provides an extremely efficient crossbar array that reduces the sneak current. The objective of this paper is to introduce and evaluate a circuit model for sensing using memristive complementary resistive switch. We introduce a reliable SPICE implementation of memristor model that captures the sensing behaviour of memristor. Our simulation results also validate the SPICE model for CRS sensing architecture, whose parameters could be easily adapted to match experimental data. The results also investigate the sensitivity and device behaviour of memristor and CRS sensor device in the presence of oxidizing and reducing gases of different concentration.

AB - Sensors give factual and process information about the environment or other physical phenomena. Sensing using memristors has been recently introduced for its potential for high density integration and miniaturization. Complementary Resistive Switch (CRS) based sensor provides an extremely efficient crossbar array that reduces the sneak current. The objective of this paper is to introduce and evaluate a circuit model for sensing using memristive complementary resistive switch. We introduce a reliable SPICE implementation of memristor model that captures the sensing behaviour of memristor. Our simulation results also validate the SPICE model for CRS sensing architecture, whose parameters could be easily adapted to match experimental data. The results also investigate the sensitivity and device behaviour of memristor and CRS sensor device in the presence of oxidizing and reducing gases of different concentration.

UR - http://www.scopus.com/inward/record.url?scp=85097641591&partnerID=8YFLogxK

U2 - 10.1109/DFT50435.2020.9250843

DO - 10.1109/DFT50435.2020.9250843

M3 - منشور من مؤتمر

T3 - 33rd IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2020

BT - 33rd IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2020

A2 - Dilillo, Luigi

A2 - Psarakis, Mihalis

A2 - Siddiqua, Taniya

Y2 - 19 October 2020 through 21 October 2020

ER -

Gupta V, Pellegrini D, Khandelwal S, Jabir A, Kvatinsky S, Martinelli E et al. Sensing with Memristive Complementary Resistive Switch: Modelling and Simulations. In Dilillo L, Psarakis M, Siddiqua T, editors, 33rd IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2020. 2020. 9250843. (33rd IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2020). doi: 10.1109/DFT50435.2020.9250843

Sensing with Memristive Complementary Resistive Switch: Modelling and Simulations

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