Self-trapped exciton state in Si nanocrystals revealed by induced absorption

W. D.A.M. De Boer, D. Timmerman, T. Gregorkiewicz, H. Zhang, W. J. Buma, A. N. Poddubny, A. A. Prokofiev, I. N. Yassievich

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Abstract

We report results of time-resolved induced absorption (IA) spectroscopy on Si nanocrystals (Si NCs) embedded in a SiO 2 matrix. In line with theoretical modeling, the IA amplitude decreases with probing photon energy, however only until a certain threshold value. For larger photon energies, an increase of IA is observed. This unexpected behavior is interpreted in terms of the self-trapped exciton state whose formation in Si NCs was put forward some time ago based on theoretical considerations. Here, we present a direct experimental confirmation of this supposition.

Original languageEnglish
Article number161409
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume85
Issue number16
DOIs
StatePublished - 25 Apr 2012
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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