Self-integration of nanowires into circuits via guided growth

Mark Schvartzman, David Tsivion, Diana Mahalu, Olga Raslin, Ernesto Joselevich

Research output: Contribution to journalArticlepeer-review


The ability to assemble discrete nanowires (NWs) with nanoscale precision on a substrate is the key to their integration into circuits and other functional systems. We demonstrate a bottom-up approach for massively parallel deterministic assembly of discrete NWs based on surface-guided horizontal growth from nanopatterned catalyst. The guided growth and the catalyst nanopattern define the direction and length, and the position of each NW, respectively, both with unprecedented precision and yield, without the need for postgrowth assembly. We used these highly ordered NWarrays for the parallel production of hundreds of independently addressable single-NW field-effect transistors, showing up to 85% yield of working devices. Furthermore, we applied this approach for the integration of 14 discrete NWs into an electronic circuit operating as a three-bit address decoder. These results demonstrate the feasibility of massively parallel "self-integration" of NWs into electronic circuits and functional systems based on guided growth.

Original languageEnglish
Pages (from-to)15195-15200
Number of pages6
JournalProceedings of the National Academy of Sciences of the United States of America
Issue number38
StatePublished - 17 Oct 2013


  • 1D nanostructures
  • Nanoelectronics
  • Nanolithography
  • Nanotechnology
  • Self-assembly

All Science Journal Classification (ASJC) codes

  • General


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