Self-heating Effects Measured in Fully Packaged FinFET Devices

E. Bender; J. B. Bernstein

doi:https://doi.org/10.1109/MIEL52794.2021.9569208

Self-heating Effects Measured in Fully Packaged FinFET Devices

E. Bender, J. B. Bernstein

Department of Electrical and Electronics Engineering

Ariel University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A unique, resource efficient method for finding the impact of Self-heating Effects (SHE) in packaged FinFET devices is presented in this work. Device level concerns seen in reliability degradation and system level issues with power dissipation are inspected using separate measuring techniques. We show that a frequency effect observed in reliability is attributed to self-heating of the Fins during device transition. The increase in temperature due to current induced self-heating was measured up to 1 GHz and extrapolated to 3 GHz. Temperature rise of the total chip caused by dynamic power dissipation is evaluated. The self-heating contribution is assessed by finding the relative thermal offset from increased frequency compared to that of added logic. A significant correlation is revealed from evaluating the device and system level studies. The method can be easily performed on smaller dimension nodes where the effects of SHE are more acute.

Original language	English
Title of host publication	2021 IEEE 32nd International Conference on Microelectronics, MIEL 2021 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	65-68
Number of pages	4
ISBN (Electronic)	9781665445283
DOIs	https://doi.org/10.1109/MIEL52794.2021.9569208
State	Published - 12 Sep 2021
Event	32nd IEEE International Conference on Microelectronics, MIEL 2021 - Nis, Serbia Duration: 12 Sep 2021 → 14 Sep 2021

Publication series

Name	Proceedings of the International Conference on Microelectronics, ICM
Volume	2021-September

Conference

Conference	32nd IEEE International Conference on Microelectronics, MIEL 2021
Country/Territory	Serbia
City	Nis
Period	12/09/21 → 14/09/21

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

https://doi.org/10.1109/MIEL52794.2021.9569208

Cite this

Bender, E., & Bernstein, J. B. (2021). Self-heating Effects Measured in Fully Packaged FinFET Devices. In 2021 IEEE 32nd International Conference on Microelectronics, MIEL 2021 - Proceedings (pp. 65-68). (Proceedings of the International Conference on Microelectronics, ICM; Vol. 2021-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MIEL52794.2021.9569208

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abstract = "A unique, resource efficient method for finding the impact of Self-heating Effects (SHE) in packaged FinFET devices is presented in this work. Device level concerns seen in reliability degradation and system level issues with power dissipation are inspected using separate measuring techniques. We show that a frequency effect observed in reliability is attributed to self-heating of the Fins during device transition. The increase in temperature due to current induced self-heating was measured up to 1 GHz and extrapolated to 3 GHz. Temperature rise of the total chip caused by dynamic power dissipation is evaluated. The self-heating contribution is assessed by finding the relative thermal offset from increased frequency compared to that of added logic. A significant correlation is revealed from evaluating the device and system level studies. The method can be easily performed on smaller dimension nodes where the effects of SHE are more acute.",

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Bender, E & Bernstein, JB 2021, Self-heating Effects Measured in Fully Packaged FinFET Devices. in 2021 IEEE 32nd International Conference on Microelectronics, MIEL 2021 - Proceedings. Proceedings of the International Conference on Microelectronics, ICM, vol. 2021-September, Institute of Electrical and Electronics Engineers Inc., pp. 65-68, 32nd IEEE International Conference on Microelectronics, MIEL 2021, Nis, Serbia, 12/09/21. https://doi.org/10.1109/MIEL52794.2021.9569208

Self-heating Effects Measured in Fully Packaged FinFET Devices. / Bender, E.; Bernstein, J. B.
2021 IEEE 32nd International Conference on Microelectronics, MIEL 2021 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2021. p. 65-68 (Proceedings of the International Conference on Microelectronics, ICM; Vol. 2021-September).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - A unique, resource efficient method for finding the impact of Self-heating Effects (SHE) in packaged FinFET devices is presented in this work. Device level concerns seen in reliability degradation and system level issues with power dissipation are inspected using separate measuring techniques. We show that a frequency effect observed in reliability is attributed to self-heating of the Fins during device transition. The increase in temperature due to current induced self-heating was measured up to 1 GHz and extrapolated to 3 GHz. Temperature rise of the total chip caused by dynamic power dissipation is evaluated. The self-heating contribution is assessed by finding the relative thermal offset from increased frequency compared to that of added logic. A significant correlation is revealed from evaluating the device and system level studies. The method can be easily performed on smaller dimension nodes where the effects of SHE are more acute.

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Bender E, Bernstein JB. Self-heating Effects Measured in Fully Packaged FinFET Devices. In 2021 IEEE 32nd International Conference on Microelectronics, MIEL 2021 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2021. p. 65-68. (Proceedings of the International Conference on Microelectronics, ICM). doi: https://doi.org/10.1109/MIEL52794.2021.9569208

Self-heating Effects Measured in Fully Packaged FinFET Devices

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