Self-assembled monolayer assisted bonding of Si and InP

I. Bakish; V. Artel; T. Ilovitsh; M. Shubely; Y. Ben-Ezra; Avinoam Zadok; C. N. Sukenik

doi:10.1364/OME.2.001141

Self-assembled monolayer assisted bonding of Si and InP

I. Bakish, V. Artel, T. Ilovitsh, M. Shubely, Y. Ben-Ezra, Avinoam Zadok, C. N. Sukenik

Bar-Ilan University

Research output: Contribution to journal › Article › peer-review

Abstract

A versatile procedure for the low-temperature bonding of silicon and indium-phosphide to silicon is proposed and demonstrated. The procedure relies on the deposition and functionalization of self-assembled, single molecular layers on the surface of one substrate, and the subsequent attachment of the monolayer to the surface of the other substrate with or without its own monolayer coating. The process is applicable to the fabrication of hybrid-silicon, active photonic devices.

Original language	English
Pages (from-to)	1141-1148
Number of pages	8
Journal	Optical Materials Express
Volume	2
Issue number	8
DOIs	https://doi.org/10.1364/OME.2.001141
State	Published - Aug 2012

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials

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10.1364/OME.2.001141

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abstract = "A versatile procedure for the low-temperature bonding of silicon and indium-phosphide to silicon is proposed and demonstrated. The procedure relies on the deposition and functionalization of self-assembled, single molecular layers on the surface of one substrate, and the subsequent attachment of the monolayer to the surface of the other substrate with or without its own monolayer coating. The process is applicable to the fabrication of hybrid-silicon, active photonic devices.",

author = "I. Bakish and V. Artel and T. Ilovitsh and M. Shubely and Y. Ben-Ezra and Avinoam Zadok and Sukenik, {C. N.}",

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AU - Bakish, I.

AU - Artel, V.

AU - Ilovitsh, T.

AU - Shubely, M.

AU - Ben-Ezra, Y.

AU - Zadok, Avinoam

AU - Sukenik, C. N.

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N2 - A versatile procedure for the low-temperature bonding of silicon and indium-phosphide to silicon is proposed and demonstrated. The procedure relies on the deposition and functionalization of self-assembled, single molecular layers on the surface of one substrate, and the subsequent attachment of the monolayer to the surface of the other substrate with or without its own monolayer coating. The process is applicable to the fabrication of hybrid-silicon, active photonic devices.

AB - A versatile procedure for the low-temperature bonding of silicon and indium-phosphide to silicon is proposed and demonstrated. The procedure relies on the deposition and functionalization of self-assembled, single molecular layers on the surface of one substrate, and the subsequent attachment of the monolayer to the surface of the other substrate with or without its own monolayer coating. The process is applicable to the fabrication of hybrid-silicon, active photonic devices.

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U2 - 10.1364/OME.2.001141

DO - 10.1364/OME.2.001141

M3 - مقالة

SN - 2159-3930

VL - 2

SP - 1141

EP - 1148

JO - Optical Materials Express

JF - Optical Materials Express

IS - 8

ER -

Self-assembled monolayer assisted bonding of Si and InP

Abstract

All Science Journal Classification (ASJC) codes

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