Self-Assembled Metallic Nanowire-Based Vertical Organic Field-Effect Transistor

Ariel J. Ben-Sasson; Daniel Azulai; Hagit Gilon; Antonio Facchetti; Gil Markovich; Nir Tessler

doi:10.1021/am505174p

Self-Assembled Metallic Nanowire-Based Vertical Organic Field-Effect Transistor

Ariel J. Ben-Sasson, Daniel Azulai, Hagit Gilon, Antonio Facchetti, Gil Markovich, Nir Tessler

Technion - Israel Institute of Technology, Tel Aviv University

Research output: Contribution to journal › Article › peer-review

Abstract

We report on in situ, self-assembly, solution-processing of metallic (Au/Ag) nanowire-based transparent electrodes integrated to vertical organic field-effect transistors (VOFETs). In the VOFET architecture, the nanowires microstructure facilitates current modulation by the gate across the otherwise shielding sandwiched source electrode. We show N-type VOFETs operation with on/off ratio ∼1 × 10⁵ and high current density (>1 mA cm^-2 at V_DS = 5 V). The integration of the device design and the transparent electrode deposition methods offers a potential route for all-solution processing-based, large-area, high-efficiency organic electronics.

Original language	English
Pages (from-to)	2149-2152
Number of pages	4
Journal	ACS applied materials & interfaces
Volume	7
Issue number	4
DOIs	https://doi.org/10.1021/am505174p
State	Published - 4 Feb 2015

Keywords

nanowires
organic electronics
self assembly
self-assembly
transparent electrodes
vertical FETs

All Science Journal Classification (ASJC) codes

General Materials Science

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10.1021/am505174p

Cite this

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title = "Self-Assembled Metallic Nanowire-Based Vertical Organic Field-Effect Transistor",

abstract = "We report on in situ, self-assembly, solution-processing of metallic (Au/Ag) nanowire-based transparent electrodes integrated to vertical organic field-effect transistors (VOFETs). In the VOFET architecture, the nanowires microstructure facilitates current modulation by the gate across the otherwise shielding sandwiched source electrode. We show N-type VOFETs operation with on/off ratio ∼1 × 105 and high current density (>1 mA cm-2 at VDS = 5 V). The integration of the device design and the transparent electrode deposition methods offers a potential route for all-solution processing-based, large-area, high-efficiency organic electronics.",

keywords = "nanowires, organic electronics, self assembly, self-assembly, transparent electrodes, vertical FETs",

author = "Ben-Sasson, {Ariel J.} and Daniel Azulai and Hagit Gilon and Antonio Facchetti and Gil Markovich and Nir Tessler",

note = "Publisher Copyright: {\textcopyright} 2015 American Chemical Society.",

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doi = "10.1021/am505174p",

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T1 - Self-Assembled Metallic Nanowire-Based Vertical Organic Field-Effect Transistor

AU - Ben-Sasson, Ariel J.

AU - Azulai, Daniel

AU - Gilon, Hagit

AU - Facchetti, Antonio

AU - Markovich, Gil

AU - Tessler, Nir

PY - 2015/2/4

Y1 - 2015/2/4

N2 - We report on in situ, self-assembly, solution-processing of metallic (Au/Ag) nanowire-based transparent electrodes integrated to vertical organic field-effect transistors (VOFETs). In the VOFET architecture, the nanowires microstructure facilitates current modulation by the gate across the otherwise shielding sandwiched source electrode. We show N-type VOFETs operation with on/off ratio ∼1 × 105 and high current density (>1 mA cm-2 at VDS = 5 V). The integration of the device design and the transparent electrode deposition methods offers a potential route for all-solution processing-based, large-area, high-efficiency organic electronics.

AB - We report on in situ, self-assembly, solution-processing of metallic (Au/Ag) nanowire-based transparent electrodes integrated to vertical organic field-effect transistors (VOFETs). In the VOFET architecture, the nanowires microstructure facilitates current modulation by the gate across the otherwise shielding sandwiched source electrode. We show N-type VOFETs operation with on/off ratio ∼1 × 105 and high current density (>1 mA cm-2 at VDS = 5 V). The integration of the device design and the transparent electrode deposition methods offers a potential route for all-solution processing-based, large-area, high-efficiency organic electronics.

KW - nanowires

KW - organic electronics

KW - self assembly

KW - self-assembly

KW - transparent electrodes

KW - vertical FETs

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DO - 10.1021/am505174p

M3 - مقالة

C2 - 25602371

SN - 1944-8244

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SP - 2149

EP - 2152

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

IS - 4

ER -

Self-Assembled Metallic Nanowire-Based Vertical Organic Field-Effect Transistor

Abstract

Keywords

All Science Journal Classification (ASJC) codes

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