TY - JOUR
T1 - Scalable Al2O3–TiO2 Conductive Oxide Interfaces as Defect Reservoirs for Resistive Switching Devices
AU - Li, Yang
AU - Wang, Wei
AU - Zhang, Di
AU - Baskin, Maria
AU - Chen, Aiping
AU - Kvatinsky, Shahar
AU - Yalon, Eilam
AU - Kornblum, Lior
N1 - Publisher Copyright: © 2022 The Authors. Advanced Electronic Materials published by Wiley-VCH GmbH.
PY - 2022
Y1 - 2022
N2 - Resistive switching devices herald a transformative technology for memory and computation, offering considerable advantages in performance and energy efficiency. Here, a simple and scalable material system of conductive oxide interfaces is employed, and their unique properties are leveraged for a new type of resistive switching device. An Al2O3–TiO2-based valence-change resistive switching device, where the conductive oxide interface serves both as the bottom electrode and as a reservoir of defects for switching, is demonstrated. The amorphous–polycrystalline Al2O3–TiO2 conductive interface is obtained following the technological path of simplifying the fabrication of the 2D electron gases (2DEGs), making them scalable for practical mass integration. Physical analysis of the device chemistry and microstructure with comprehensive electrical analysis of its switching behavior and performance is combined. The origin of the resistive switching is pinpointed to the conductive oxide interface, which serves both as the bottom electrode and as a reservoir of oxygen vacancies. The latter plays a key role in valence-change resistive switching devices. The new device, based on scalable and complementary metal–oxide–semiconductor (CMOS)-technology-compatible fabrication processes, opens new design spaces toward increased tunability and simplification of the device selection challenge.
AB - Resistive switching devices herald a transformative technology for memory and computation, offering considerable advantages in performance and energy efficiency. Here, a simple and scalable material system of conductive oxide interfaces is employed, and their unique properties are leveraged for a new type of resistive switching device. An Al2O3–TiO2-based valence-change resistive switching device, where the conductive oxide interface serves both as the bottom electrode and as a reservoir of defects for switching, is demonstrated. The amorphous–polycrystalline Al2O3–TiO2 conductive interface is obtained following the technological path of simplifying the fabrication of the 2D electron gases (2DEGs), making them scalable for practical mass integration. Physical analysis of the device chemistry and microstructure with comprehensive electrical analysis of its switching behavior and performance is combined. The origin of the resistive switching is pinpointed to the conductive oxide interface, which serves both as the bottom electrode and as a reservoir of oxygen vacancies. The latter plays a key role in valence-change resistive switching devices. The new device, based on scalable and complementary metal–oxide–semiconductor (CMOS)-technology-compatible fabrication processes, opens new design spaces toward increased tunability and simplification of the device selection challenge.
KW - 2D electron gas
KW - atomic layer deposition
KW - conductive oxide interfaces
KW - resistive switching
KW - resistive switching memory
KW - valence change memory
UR - http://www.scopus.com/inward/record.url?scp=85142188539&partnerID=8YFLogxK
U2 - https://doi.org/10.1002/aelm.202200800
DO - https://doi.org/10.1002/aelm.202200800
M3 - مقالة
SN - 2199-160X
VL - 9
JO - Advanced Electronic Materials
JF - Advanced Electronic Materials
IS - 2
M1 - 2200800
ER -