Role of surface passivation in integrated sub-bandgap silicon photodetection

Rivka Gherabli; Meir Grajower; Joseph Shappir; Noa Mazurski; Menachem Wofsy; Naor Inbar; Jacob B. Khurgin; Uriel Levy

doi:https://doi.org/10.1364/OL.388983

Role of surface passivation in integrated sub-bandgap silicon photodetection

Rivka Gherabli, Meir Grajower, Joseph Shappir, Noa Mazurski, Menachem Wofsy, Naor Inbar, Jacob B. Khurgin, Uriel Levy

Department of Applied Physics

The Hebrew University of Jerusalem

Research output: Contribution to journal › Article › peer-review

Abstract

We study experimentally the effect of oxide removal on the sub-bandgap photodetection in silicon waveguides at the telecom wavelength regime. Depassivating the device allows for the enhancement of the quantum efficiency by about 2-3 times. Furthermore, the propagation loss within the device is significantly reduced by the oxide removal. Measuring the device 60 days after the depassivation shows slight differences. We provide a possible explanation for these observations. Clearly, passivation and depassivation play an essential role in the design and the implementation of such sub-bandgap photodetector devices for applications such as on-chip light monitoring.

Original language	English
Pages (from-to)	2128-2131
Number of pages	4
Journal	Optics Letters
Volume	45
Issue number	7
DOIs	https://doi.org/10.1364/OL.388983
State	Published - 1 Apr 2020

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics

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title = "Role of surface passivation in integrated sub-bandgap silicon photodetection",

abstract = "We study experimentally the effect of oxide removal on the sub-bandgap photodetection in silicon waveguides at the telecom wavelength regime. Depassivating the device allows for the enhancement of the quantum efficiency by about 2-3 times. Furthermore, the propagation loss within the device is significantly reduced by the oxide removal. Measuring the device 60 days after the depassivation shows slight differences. We provide a possible explanation for these observations. Clearly, passivation and depassivation play an essential role in the design and the implementation of such sub-bandgap photodetector devices for applications such as on-chip light monitoring.",

author = "Rivka Gherabli and Meir Grajower and Joseph Shappir and Noa Mazurski and Menachem Wofsy and Naor Inbar and Khurgin, {Jacob B.} and Uriel Levy",

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AU - Gherabli, Rivka

AU - Grajower, Meir

AU - Shappir, Joseph

AU - Mazurski, Noa

AU - Wofsy, Menachem

AU - Inbar, Naor

AU - Khurgin, Jacob B.

AU - Levy, Uriel

PY - 2020/4/1

Y1 - 2020/4/1

N2 - We study experimentally the effect of oxide removal on the sub-bandgap photodetection in silicon waveguides at the telecom wavelength regime. Depassivating the device allows for the enhancement of the quantum efficiency by about 2-3 times. Furthermore, the propagation loss within the device is significantly reduced by the oxide removal. Measuring the device 60 days after the depassivation shows slight differences. We provide a possible explanation for these observations. Clearly, passivation and depassivation play an essential role in the design and the implementation of such sub-bandgap photodetector devices for applications such as on-chip light monitoring.

AB - We study experimentally the effect of oxide removal on the sub-bandgap photodetection in silicon waveguides at the telecom wavelength regime. Depassivating the device allows for the enhancement of the quantum efficiency by about 2-3 times. Furthermore, the propagation loss within the device is significantly reduced by the oxide removal. Measuring the device 60 days after the depassivation shows slight differences. We provide a possible explanation for these observations. Clearly, passivation and depassivation play an essential role in the design and the implementation of such sub-bandgap photodetector devices for applications such as on-chip light monitoring.

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M3 - مقالة

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SN - 0146-9592

VL - 45

SP - 2128

EP - 2131

JO - Optics Letters

JF - Optics Letters

IS - 7

ER -

Role of surface passivation in integrated sub-bandgap silicon photodetection

Abstract

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