Robust 60 GHz 90nm and 40nm CMOS wideband neutralized amplifiers with 23dB gain 4.6dB NF and 24% PAE

Emanuel Cohen; Ofir Degani; Shmuel Ravid; Dan Ritter

doi:10.1109/SiRF.2012.6160151

Robust 60 GHz 90nm and 40nm CMOS wideband neutralized amplifiers with 23dB gain 4.6dB NF and 24% PAE

Emanuel Cohen, Ofir Degani, Shmuel Ravid, Dan Ritter

Electrical and Computer Engineering

Technion - Israel Institute of Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A three stage transformer differential cross coupled (CC) LNA and PA with integrated baluns for operation in the 57-66GHz band are presented. The LNA fabricated in a 90nm CMOS process achieves 23dB gain and 4.6dB NF at 13mA and 1.3V supply, with 0.06mm ² in size. The PA, also fabricated in a 90nm CMOS process, has maximum power added efficiency (PAE) of 19.4%, 9.4dBm Psat, and 23dB gain with a 12GHz BW and 0.05mm ² chip size. A 2 stage PA fabricated in a digital 40nm CMOS achieves 19dB gain and a record PAE of 24%. The paper analyzes the advantages of MOScap neutralization feedback compared to metal capacitors and low k transformers for process stability and broadband design. Tuning is added to the CC feedback to compensate for process variations.

Original language	English
Title of host publication	2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2012 - Digest of Papers
Pages	207-210
Number of pages	4
DOIs	https://doi.org/10.1109/SiRF.2012.6160151
State	Published - 2012
Event	2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2012 - Santa Clara, CA, United States Duration: 16 Jan 2012 → 18 Jan 2012

Publication series

Name	2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2012 - Digest of Papers

Conference

Conference	2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2012
Country/Territory	United States
City	Santa Clara, CA
Period	16/01/12 → 18/01/12

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/SiRF.2012.6160151

Cite this

Cohen, E., Degani, O., Ravid, S., & Ritter, D. (2012). Robust 60 GHz 90nm and 40nm CMOS wideband neutralized amplifiers with 23dB gain 4.6dB NF and 24% PAE. In 2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2012 - Digest of Papers (pp. 207-210). Article 6160151 (2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2012 - Digest of Papers). https://doi.org/10.1109/SiRF.2012.6160151

Cohen, Emanuel ; Degani, Ofir ; Ravid, Shmuel et al. / Robust 60 GHz 90nm and 40nm CMOS wideband neutralized amplifiers with 23dB gain 4.6dB NF and 24% PAE. 2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2012 - Digest of Papers. 2012. pp. 207-210 (2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2012 - Digest of Papers).

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title = "Robust 60 GHz 90nm and 40nm CMOS wideband neutralized amplifiers with 23dB gain 4.6dB NF and 24% PAE",

abstract = "A three stage transformer differential cross coupled (CC) LNA and PA with integrated baluns for operation in the 57-66GHz band are presented. The LNA fabricated in a 90nm CMOS process achieves 23dB gain and 4.6dB NF at 13mA and 1.3V supply, with 0.06mm 2 in size. The PA, also fabricated in a 90nm CMOS process, has maximum power added efficiency (PAE) of 19.4%, 9.4dBm Psat, and 23dB gain with a 12GHz BW and 0.05mm 2 chip size. A 2 stage PA fabricated in a digital 40nm CMOS achieves 19dB gain and a record PAE of 24%. The paper analyzes the advantages of MOScap neutralization feedback compared to metal capacitors and low k transformers for process stability and broadband design. Tuning is added to the CC feedback to compensate for process variations.",

author = "Emanuel Cohen and Ofir Degani and Shmuel Ravid and Dan Ritter",

year = "2012",

doi = "10.1109/SiRF.2012.6160151",

language = "الإنجليزيّة",

isbn = "9781457713163",

series = "2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2012 - Digest of Papers",

pages = "207--210",

booktitle = "2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2012 - Digest of Papers",

note = "2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2012 ; Conference date: 16-01-2012 Through 18-01-2012",

}

Cohen, E, Degani, O, Ravid, S & Ritter, D 2012, Robust 60 GHz 90nm and 40nm CMOS wideband neutralized amplifiers with 23dB gain 4.6dB NF and 24% PAE. in 2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2012 - Digest of Papers., 6160151, 2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2012 - Digest of Papers, pp. 207-210, 2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2012, Santa Clara, CA, United States, 16/01/12. https://doi.org/10.1109/SiRF.2012.6160151

Robust 60 GHz 90nm and 40nm CMOS wideband neutralized amplifiers with 23dB gain 4.6dB NF and 24% PAE. / Cohen, Emanuel; Degani, Ofir; Ravid, Shmuel et al.
2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2012 - Digest of Papers. 2012. p. 207-210 6160151 (2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2012 - Digest of Papers).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Ritter, Dan

PY - 2012

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N2 - A three stage transformer differential cross coupled (CC) LNA and PA with integrated baluns for operation in the 57-66GHz band are presented. The LNA fabricated in a 90nm CMOS process achieves 23dB gain and 4.6dB NF at 13mA and 1.3V supply, with 0.06mm 2 in size. The PA, also fabricated in a 90nm CMOS process, has maximum power added efficiency (PAE) of 19.4%, 9.4dBm Psat, and 23dB gain with a 12GHz BW and 0.05mm 2 chip size. A 2 stage PA fabricated in a digital 40nm CMOS achieves 19dB gain and a record PAE of 24%. The paper analyzes the advantages of MOScap neutralization feedback compared to metal capacitors and low k transformers for process stability and broadband design. Tuning is added to the CC feedback to compensate for process variations.

AB - A three stage transformer differential cross coupled (CC) LNA and PA with integrated baluns for operation in the 57-66GHz band are presented. The LNA fabricated in a 90nm CMOS process achieves 23dB gain and 4.6dB NF at 13mA and 1.3V supply, with 0.06mm 2 in size. The PA, also fabricated in a 90nm CMOS process, has maximum power added efficiency (PAE) of 19.4%, 9.4dBm Psat, and 23dB gain with a 12GHz BW and 0.05mm 2 chip size. A 2 stage PA fabricated in a digital 40nm CMOS achieves 19dB gain and a record PAE of 24%. The paper analyzes the advantages of MOScap neutralization feedback compared to metal capacitors and low k transformers for process stability and broadband design. Tuning is added to the CC feedback to compensate for process variations.

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Cohen E, Degani O, Ravid S, Ritter D. Robust 60 GHz 90nm and 40nm CMOS wideband neutralized amplifiers with 23dB gain 4.6dB NF and 24% PAE. In 2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2012 - Digest of Papers. 2012. p. 207-210. 6160151. (2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2012 - Digest of Papers). doi: 10.1109/SiRF.2012.6160151

Robust 60 GHz 90nm and 40nm CMOS wideband neutralized amplifiers with 23dB gain 4.6dB NF and 24% PAE

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All Science Journal Classification (ASJC) codes

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